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Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiationby Fabricio Alcalde Bessia , Martín Pérez, Miguel Sofo Haro, Iván Sidelnik, J. Jerónimo Blostein, Sergio Suárez, Pablo Pérez, Mariano Gómez Berisso, and Jose LipovetzkyIn this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture. more... |
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Large-Area Compton Camera for High-Speed and 3-D Imagingby Young-su Kim, Jae Hyeon Kim, Junyoung Lee, and Chan Hyeong KimCompton imaging is a promising imaging modality for radioactive contamination in nuclear facilities. However, most of the Compton cameras in nuclear applications have been constructed with small detector sensors, up to a few centimeters, resulting in low imaging sensitivities. To overcome the limitation and improve imaging sensitivity, in this paper, a Compton camera, named a large-area Compton camera (LACC), was developed using two large-size (27 cm ×27 cm) monolithic NaI(Tl) scintillators and 72 square-type photomultiplier tubes. The imaging performance of the LACC was evaluated for surface and internal contamination cases. Our results show that the absolute imaging sensitivity of the LACC was 3.4×10−5 for a 137 Cs point source at about 1-m distance in front of the LACC, which is a few 10× higher than those of the existing Compton cameras. The obtained imaging resolution was 14.1° full-width at half-maximum (FWHM) when we use the backprojection algorithm and 5.6° FWHM when we use the maximum-likelihood expectation–maximization algorithm. The LACC also showed the 3-D imaging capability, not only for the surface contamination cases but also for the internal contamination cases within a depth of a few tens of centimeters. more... |
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VUV-Sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXOby A. Jamil , T. Ziegler, P. Hufschmidt, G. Li, L. Lupin-Jimenez, T. Michel, I. Ostrovskiy, F. Retière, J. Schneider, M. Wagenpfeil, A. Alamre, J. B. Albert, G. Anton, I. J. Arnquist, I. Badhrees, P. S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner , A. Burenkov, G. F. Cao, L. Cao, W. R. Cen, C. Chambers, S. A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S. J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. DeVoe, J. Dilling, Y. Y. Ding, M. J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E. V. Hansen, D. Harris, M. Hasan, M. Heffner, J. Hößl, E. W. Hoppe, A. House, M. Hughes, Y. Ito, A. Iverson, C. Jessiman, M. J. Jewell, X. S. Jiang, A. Karelin, L. J. Kaufman, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K. S. Kumar, Y. Lan, A. Larson, D. S. Leonard, S. Li, Z. Li, C. Licciardi, Y. H. Lin, P. Lv, R. MacLellan, B. Mong, D. C. Moore, K. Murray, R. J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, A. Odian, M. Oriunno, J. L. Orrell, G. S. Ortega, C. T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, A. Robinson, T. Rossignol, P. C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, A. Schubert, D. Sinclair, K. Skarpaas, VIII, A. K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, X. L. Sun, M. Tarka, J. Todd, T. Tolba, T. I. Totev, R. Tsang, T. Tsang, F. Vachon, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, Q. Wang, J. Watkins, M. Weber, W. Wei, L. J. Wen, U. Wichoski, G. Wrede, S. X. Wu, W. H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, X. Zhang, J. Zhao, and Y. ZhouFuture ton-scale liquefied noble gas detectors depend on efficient light detection in the vacuum ultraviolet (VUV) range. In the past years, silicon photomultipliers (SiPMs) have emerged as a valid alternative to standard photomultiplier tubes or large-area avalanche photodiodes. The next-generation double-beta decay experiment, nEXO, with a 5-ton liquid xenon time projection chamber will use SiPMs for detecting the 175-nm xenon scintillation light, in order to achieve an energy resolution of σ/Qββ=1 %. This paper presents recent measurements of the VUV-HD generation SiPMs from Fondazione Bruno Kessler, Trento, Italy, in two complementary setups. It includes measurements of the photon-detection efficiency (PDE) with gaseous xenon scintillation light in a vacuum setup and dark measurements in a dry nitrogen gas setup. We report improved PDE at 175 nm compared to previous generation devices that would meet the criteria of nEXO. Furthermore, we present the projected nEXO detector light collection and energy resolution that could be achieved by using these SiPMs. more... |
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A PUBLICATION OF THE IEEE NUCLEAR AND PLASMA SCIENCES SOCIETY |
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NOVEMBER 2018 | VOLUME 65 | NUMBER 11 | IETNAE | (SSN 0018-9499) | ||
REGULAR PAPERS RADIATION INSTRUMENTATION |
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