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JUNE 2018 FEATURE ARTICLES - THESE ARE OPEN ACCESS FOR A LIMITED TIME

Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics

by C.D. Liang, R. Ma, Y. Su, A. O’Hara, E.X. Zhang, M.L. Alles, P. Wang, S.E. Zhao, S.T. Pantelides, S.J. Koester, R.D. Schrimpf, and D.M. Fleetwood


We have evaluated radiation-induced charge trapping and low-frequency noise in passivated black phosphorus (BP) MOSFETs with HfO2 gate dielectrics. Thinning the gate dielectric reduces total ionizing dose-induced threshold voltage shifts. The defect-energy distribution estimated from lowfrequency noise measurements performed as a function of temperature decreases with increasing energy in as-processed devices. Local maxima in noise magnitude are observed in irradiated devices at activation energies of ∼0.2 and ∼0.5 eV. Larger defectrelated peaks in noise magnitude in the range of 0.35-0.5 eV are observed after biased post-irradiation annealing, and/or vacuum storage of the devices after irradiation and annealing. Density functional theory calculations strongly support significant roles for O vacancies in HfO2 and H+ transport and reactions near the BP/HfO2 interface in the observed radiation response and low-frequency noise. more...
 
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Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes

by A. Akturk, J.M. McGarrity, N. Goldsman, D. Lichtenwalner, B. Hull, D. Grider, and R. Wilkins


Investigations of terrestrial neutron radiation-induced failures in silicon carbide power MOSFETs and diodes indicate that the failures are related to a hole-initiated impact ionization process followed by a thermal transient resulting in the loss of device voltage blocking ability due to the damage of lattice along a filament within the device volume. Irrespective of device type, MOSFET or diode, the start of these failures exhibits the same characteristics, and can be mitigated by decrease in field in device OFF state. These failures with origins in impact ionization and fast thermal transients are fundamentally different from those of bipolar burn-out events, observed in silicon power devices. In addition, once a failure event starts, the failure ends with all terminals shorting. more...
 
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On the Relationship Between Scintillation Anisotropy and Crystal Structure in Pure Crystalline Organic Scintillator Materials

by Patricia Schuster, Patrick Feng, and Erik Brubaker


The scintillation anisotropy effect for proton recoil events has been investigated in five pure organic crystalline materials: anthracene, trans-stilbene, p-terphenyl, bibenzyl, and diphenylacetylene (DPAC). These measurements include the characterization of the scintillation response for one hemisphere of proton recoil directions in each crystal. In addition to standard measurements of the total light output and pulse shape at each angle, the prompt and delayed light anisotropies are analyzed, allowing for the investigation of the singlet and triplet molecular excitation behaviors independently. This paper provides new quantitative and qualitative observations that make progress toward understanding the physical mechanisms behind the scintillation anisotropy. These measurements show that the relationship between the prompt and delayed light anisotropies is correlated with a crystal structure, as it changes between the pi-stacked crystal structure materials (anthracene and p-terphenyl) and the herringbone crystal structure materials (stilbene, bibenzyl, and DPAC). The observations are consistent with a model in which there are preferred directions of kinetic processes for the molecular excitations. These processes and the impact of their directional dependences on the scintillation anisotropy are discussed. more...
 
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Study on the Performance of the Neutron Diffractometer (HIPD at CARR) by Monte Carlo Simulation and Convolution Methods

by Wenyun Yang, Hui Zhao, Youfang Lai, Guanyi Qiao, Yuanhua Xia, Honglin Du, Jingzhi Han, Changsheng Wang, Shunquan Liu, Yingchang Yang, Yanglong Hou, and Jinbo Yang


The compromise between intensity and resolution is the core issue for the powder neutron diffraction techniques. An investigation of the optimum configuration of a neutron instrument is necessary to meet the requirement for both the intensity and resolution before the final construction. In this paper, the performance of the high-intensity powder neutron diffractometer (HIPD) at China Advanced Research Reactor has been studied by Monte Carlo simulation and convolution methods. The virtual detector Monitor-nD with super fine recording elements was used to record the diffraction patterns of the simulated HIPD. In order to introduce the spatial resolution effect of the detector in the diffraction pattern, the convolution method was adopted. The diffraction peaks from the diffraction patterns were then used to calculate the minimum interplanar spacing difference Δd that the HIPD can distinguish. It is obtained that the minimum resolution of the HIPD is 2.08×10−3 ( Δd/d ) for the current design. The resolution of the HIPD calculated above is consistent with the resolution actually measured according to the Ni sample diffraction experiment. This indicates that the above simulation method has high reliability. Finally, a movable 20' Soller collimator and sample cans with 3 and 6 mm diameters are recommended to be used to optimize the ND experiment. After installing the 20' Soller collimator, the minimum resolution can be 1.88×10-3 ( Δd/d ). The diffraction intensity of the 6-mm-diameter sample will be almost 3 times higher than that of the 3-mm-diameter sample. more...
 
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A PUBLICATION OF THE IEEE NUCLEAR AND PLASMA SCIENCES SOCIETY

JUNE 2018   |  VOLUME 65  |  NUMBER 6  |  IETNAE  |  (SSN 0018-9499)

REGULAR PAPERS
RADIATION EFFECTS
Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics . . . . . . . . . . . . . . . . C. D. Liang, R. Ma, Y. Su,   A. O’Hara,   E. X. Zhang,   M. L. Alles,   P. Wang,   S. E. Zhao,   S. T. Pantelides,  S. J. Koester,  R. D. Schrimpf,  and  D. M. Fleetwood
Proposing a Solution for Single-Event Upset in 1T1R RRAM Memory Arrays . . . . . . . . . . . . . . . . . . A. M. S. Tosson, S. Yu, M. H. Anis, and L. Wei
Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Akturk, J. M. McGarrity, N. Goldsman, D. Lichtenwalner, B. Hull, D. Grider, and R. Wilkins
Technology Scaling Trend of Soft Error Rate in Flip-Flops in 1× nm Bulk FinFET Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T. Uemura, S. Lee, U. Monga, J. Choi, S. Lee, and S. Pae
Fixed Pattern Noise and Temporal Noise Degradation Induced by Radiation Effects in Pinned Photodiode CMOS Image Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Z. Wang, Y. Xue, W. Chen, B. He, Z. Yao, W. Ma, and J. Sheng
Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . X. Li, J. Yang, D. M. Fleetwood, C. Liu, Y. Wei, H. J. Barnaby, and K. F. Galloway

RADIATION INSTRUMENTATION
APD Rise Time Measurements for 50–300-keV Ions . . . . . . . . . . . . . . . . . . M. J. Starkey, K. Ogasawara, M. A. Dayeh, M. I. Desai, and S. A. Livi
IBEX: Versatile Readout ASIC With Spectral Imaging Capability and High Count Rate Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Bochenek, S. Bottinelli, C. Broennimann, P. Livi, T. Loeliger, V. Radicci, R. Schnyder, and P. Zambon
On the Relationship Between Scintillation Anisotropy and Crystal Structure in Pure Crystalline Organic Scintillator Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P. Schuster, P. Feng, and E. Brubaker
Design of a CDS ASIC for Multireadout X-Ray CCDs With a 0.032% INL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B. Lu and Y. Chen
Readout Electronics of T0 Detector in the External Target Experiment of CSR in HIRFL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P. Deng, L. Zhao, J. Lu, P. Xia, J. Liu, M. Li, S. Liu, and Q. An
Study on the Performance of the Neutron Diffractometer (HIPD at CARR) by Monte Carlo Simulation and Convolution Methods . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . W. Yang, H. Zhao, Y. Lai, G. Qiao, Y. Xia, H. Du, J. Han, C. Wang, S. Liu, Y. Yang, Y. Hou, and J. Yang

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