Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories

Influence of LDD Spacers and H⁺ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Dose

Total Ionizing Dose Radiation-Induced Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors

A PUBLICATION OF THE IEEE NUCLEAR AND PLASMA SCIENCES SOCIETY

EDITORIAL
Conference Comments by the General Chair . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V. Ferlet-Cavrois
Special NSREC 2017 Issue of the IEEE TRANSACTIONS ON NUCLEAR SCIENCE Comments by the Editors . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. Fleetwood, D. Brown, S. Girard, S. Gerardin, I. S. Esqueda, W. Robinson, and S. Moss

LIST OF REVIEWERS
NSREC 2017 Special Issue of the IEEE TRANSACTIONS ON NUCLEAR SCIENCE List of Reviewers

AWARDS
2017 IEEE Nuclear and Space Radiation Effects Conference Awards Comments by the Chairman . . . . . . . . . . . . . . . . . . . . . . . . . . . . J.-L. Leray
Outstanding Conference Paper Award: 2017 IEEE Nuclear and Space Radiation Effects Conference

RADIATION EFFECTS IN DEVICES AND INTEGRATED CIRCUITS
Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. Chen, E. Wilcox, R. L. Ladbury, C. Seidleck, H. Kim, A. Phan, and K. A. LaBel
Electron Irradiation of Samsung 8-Gb NAND Flash Memory . . . . . . . . . . . . . . . . . F. Irom, L. D. Edmonds, G. R. Allen, W. Kim, and S. Vartanian
Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. Gong, W. Liao, E. X. Zhang, A. L. Sternberg, M. W. McCurdy, J. L. Davidson,
     R. A. Reed,   D. M. Fleetwood,   R. D. Schrimpf,   P. D. Shuvra,   J.-T. Lin,   S. McNamara,   K. M. Walsh,   B. W. Alphenaar,  and  M. L. Alles
Investigations on the Geometry Effects and Bias Configuration on the TID Response of nMOS SOI Tri-Gate Nanowire Field-Effect
     Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. Riffaud, M. Gaillardin,
     C. Marcandella,  M. Martinez,  P. Paillet,  O. Duhamel,  T. Lagutere,  M. Raine,  N. Richard,  F. Andrieu,  S. Barraud,  M. Vinet, and O. Faynot
Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate
      Dielectric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. A. Bhuiyan, H. Zhou, S.-J. Chang, X. Lou,
      X. Gong, R. Jiang, H. Gong, E. X. Zhang, C.-H. Won, J.-W. Lim, J.-H. Lee, R. G. Gordon, R. A. Reed, D. M. Fleetwood, P. Ye, and  T.-P. Ma
TID Effects in Reconfigurable MOSFETs Using 2-D Semiconductor WSe₂ . . . . P. Dhakras, P. Agnihotri, H. Bakhru, H. L. Hughes, and J. U. Lee
Dose-Rate Effects on the Total-Ionizing-Dose Response of Piezoresistive Micromachined Cantilevers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C. N. Arutt, W. Liao, H. Gong, P. D. Shuvra, J.-T. Lin, M. L. Alles,
      B. W. Alphenaar, J. L. Davidson, K. M. Walsh, S. McNamara, E. X. Zhang, A. L. Sternberg, D. M. Fleetwood, R. A. Reed, and R. D. Schrimpf
Investigation of TID and Dynamic Burn-In-Induced V_T Shift on RTG4 Flash-Based FPGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
     . . . . . . . . . . . . . . . . . . . . . . . . N. Rezzak, J.-J. Wang, M. Traas A. Zerrouki, G. Bakker, F. Xue, A. Cai, F. Hawley, J. McCollum, and E. Hamdy
Atypical Effect of Displacement Damage on LM124 Bipolar Integrated Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T. Borel, F. Roig, A. Michez, B. Azais, S. Danzeca, N. J.-H. Roche, F. Bezerra, P. Calvel, and L. Dusseau
Total-Ionizing-Dose Response of Nb₂O₅-Based MIM Diodes for Neuromorphic Computing Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
     R. Jiang, E. X. Zhang, S. E. Zhao, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, M. L. Alles, J. C. Shank, M. B. Tellekamp, and W. A. Doolittle

RADIATION EFFECTS IN DEVICES AND INTEGRATED CIRCUITS
Total-Ionizing Dose Effects on Charge Transfer Efficiency and Image Lag in Pinned Photodiode CMOS Image Sensors . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. Rizzolo, V. Goiffon, M. Estribeau, P. Paillet, C. Marcandella, C. Durnez, and P. Magnan
Total Ionizing Dose Radiation-Induced Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . C. Durnez, V. Goiffon, C. Virmontois, S. Rizzolo, A. Le Roch, P. Magnan, P. Paillet, C. Marcandella, and L. Rubaldo
Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling . . . . . . . . . . . . . . . . . . . . . . .
     . . . . . . . . . . . . . . . . . . . . . . .V. Goiffon, S. Rizzolo, F. Corbière, S. Rolando, S. Bounasser, M. Sergent, A. Chabane, O. Marcelot, M. Estribeau,
     P. Magnan,  P. Paillet,  S. Girard,  M. Gaillardin,  C. Marcandella,  T. Allanche,  M. Van Uffelen,   L. M. Casellas,   R. Scott,   and   W. De Cock
Steady-State Radiation-Induced Effects on the Performances of BOTDA and BOTDR Optical Fiber Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . .A. Morana, I. Planes, S. Girard, C. Cangialosi, S. Delepine-Lesoille, E. Marin, A. Boukenter, and Y. Ouerdane
Single-Event Transients in Readout Circuitries at Low Temperature Down to 50 K . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Al Youssef, L. Artola, S. Ducret, G. Hubert, R. Buiron, C. Poivey, F. Perrier, and S. Parola
Radiation-Induced Attenuation in Single-Mode Phosphosilicate Optical Fibers for Radiation Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . D. Di Francesca, G. Li Vecchi, S. Girard, A. Alessi, I. Reghioua, A. Boukenter, Y. Ouerdane, Y. Kadi, and M. Brugger
Vulnerability and Hardening Studies of Optical and Illumination Systems at MGy Dose Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T. Allanche, P. Paillet, V. Goiffon, C. Muller, M. Van Uffelen, L. Mont-Casellas, O. Duhamel,
      C. Marcandella, S. Rizzolo, P. Magnan, R. Clerc, T. Lépine,  M. Hébert,  A. Boukenter,  Y. Ouerdane, R. Scott,   W. De Cock,   and   S. Girard
Potential Limitations on Integrated Silicon Photonic Waveguides Operating in a Heavy Ion Environment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P. S. Goley, Z. E. Fleetwood, and J. D. Cressler

BASIC MECHANISMS OF RADIATION EFFECTS
Coverglass Radiation-Induced Multijunction Solar Cell Current-Limiting Effects . . . . . . . . . . . . . . . . . . . . . . . . . S. R. Messenger and M. A. Kruer
Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors . . . . . . . . . . . . . . . . . . . . P. Wang, C. Perini, A. O’Hara,
      B. R. Tuttle, E. X. Zhang, H. Gong, L. Dong, C. Liang, R. Jiang, W. Liao, D. M. Fleetwood, R. D. Schrimpf, E. M. Vogel, and S. T. Pantelides
Influence of LDD Spacers and H⁺ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . F. Faccio, G. Borghello,
     E. Lerario,  D. M. Fleetwood,  R. D. Schrimpf,  H. Gong,  E. X. Zhang,  P. Wang,  S. Michelis,  S. Gerardin, A. Paccagnella,  and  S. Bonaldo
Capacitance–Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . S. E. Zhao, R. Jiang,
      E. X. Zhang, W. Liao, C. Liang, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. Linten, J. Mitard, N. Collaert,  S. Sioncke,  and  N. Waldron
Understanding the Implications of a LINAC’s Microstructure on Devices and Photocurrent Models . . . . . . . . . . . . . . . . . . . . . . . . . . M. L. McLain,
      J. K. McDonald,     C. E. Hembree,     T. J. Sheridan,     T. A. Weingartner,     P. E. Dodd,    M. R. Shaneyfelt,   F. Hartman,   and   D. A. Black
In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. L. Taggart, W. Chen, Y. Gonzalez-Velo, H. J. Barnaby, K. Holbert, and M. N. Kozicki
Total Ionization Dose Effects on Charge-Trapping Memory With Al₂O₃/HfO₂/Al₂O₃ Trilayer Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. S. Bi, Y. N. Xu, G. B. Xu, H. B. Wang, L. Chen, and M. Liu
Stochastic Gain Degradation in III–V Heterojunction Bipolar Transistors Due to Single Particle Displacement Damage . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . G. Vizkelethy, E. S. Bielejec, and B. A. Aguirre

SINGLE-EVENT EFFECTS: DEVICES AND INTEGRATED CIRCUITS
Multiple-Cell Upsets Induced by Single High-Energy Electrons . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. J. Gadlage, A. H. Roach, A. R. Duncan, A. M. Williams, D. P. Bossev, and M. J. Kay
Single-Event Latch-Up: Increased Sensitivity From Planar to FinFET . . . . . . . . . . . . . . . J. Karp, M. J. Hart, P. Maillard, G. Hellings, and D. Linten
Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies . . . P. Nsengiyumva, L. W. Massengill, J. S. Kauppila,  J. A. Maharrey,
     R. C. Harrington,    T. D. Haeffner,    D. R. Ball,    M. L. Alles,    B. L. Bhuva,   W. T. Holman,   E. X. Zhang,   J. D. Rowe   and   A. L. Sternberg
Single-Event Upset Mitigation in a Complementary SiGe HBT BiCMOS Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . .N. E. Lourenco, A. Ildefonso, G. N. Tzintzarov, Z. E. Fleetwood, K. Motoki, P. Paki, M. Kaynak, and J. D. Cressler
Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Ildefonso,
      C. T. Coen,  Z. E. Fleetwood,  G. N. Tzintzarov,  M. T. Wachter,  A. Khachatrian,  D. McMorrow,   J. H. Warner,   P. Paki,   and   J. D. Cressler
Transmission Line Pulse Test Method for Estimating SEB Performance of n-Channel Lateral DMOS Power Transistors . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Hamlyn, P. L. Hower, K. Warren, and R. C. Baumann
Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. F. Witulski,
      R. Arslanbekov,  A. Raman,  R. D. Schrimpf,   A. L. Sternberg,   K. F. Galloway,  A. Javanainen,  D. Grider,  D. J. Lichtenwalner,  and  B. Hull
Analysis of Single-Event Effects in DDR3 and DDR3L SDRAMs Using Laser Testing and Monte-Carlo Simulations . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P. Kohler, V. Pouget, F. Wrobel, F. Saigné, P. X. Wang, and M.-C. Vassal
Failure Analysis of Heavy Ion-Irradiated Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . M. C. Casey, J.-M. Lauenstein, R. J. Weachock, E. P. Wilcox, L. M. Hua, M. J. Campola, A. D. Topper, R. L. Ladbury, and K. A. LaBel
Dynamic SEU Sensitivity of Designs on Two 28-nm SRAM-Based FPGA Architectures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. M. Keller, T. A. Whiting, K. B. Sawyer, and M. J. Wirthlin
On the Reliability of Linear Regression and Pattern Recognition Feedforward Artificial Neural Networks in FPGAs . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . F. Libano, P. Rech, L. Tambara, J. Tonfat, and F. Kastensmidt
Scaling Effects on Single-Event Transients in InGaAs FinFETs . . . . . . . . .. H. Gong, K. Ni, E. X. Zhang, A. L. Sternberg, J. A. Kozub, K. L. Ryder,
      R. F. Keller, L. D. Ryder, S. M. Weiss, R. A. Weller, M. L. Alles,  R. A. Reed,  D. M. Fleetwood,  R. D. Schrimpf,  A. Vardi,  and J. A. del Alamo
An Empirical Model for Predicting SE Cross Section for Combinational Logic Circuits in Advanced Technologies . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. Jiang, H. Zhang, J. S. Kauppila, L. W. Massengill, and B. L. Bhuva
Time-Domain Modeling of All-Digital PLLs to Single-Event Upset Perturbations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
     Y. P. Chen, L. W. Massengill, A. L. Sternberg, E. X. Zhang, J. S. Kauppila, M. Yao, A. L. Amort, B. L. Bhuva, W. T. Holman, and T. D. Loveless

SINGLE-EVENT EFFECTS: MECHANISMS AND MODELING
Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Bagatin,
      S. Gerardin, A. Paccagnella, S. Beltrami, E. Camerlenghi,  M. Bertuccio, A. Costantino, A. Zadeh, V. Ferlet-Cavrois, G. Santin,  and  E. Daly
The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. R. Ball, M. L. Alles, J. S. Kauppila, R. C. Harrington,
      J. A. Maharrey,    P. Nsengiyumva,    T. D. Haeffner,    J. D. Rowe,    A. L. Sternberg,    E. X. Zhang,    B. L. Bhuva,    and    L. W. Massengill
Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1-D Case Applied to 28-nm FD-SOI Devices . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V. Malherbe, G. Gasiot, T. Thery, J.-L. Autran, and P. Roche
Estimation of the Single-Event Upset Sensitivity of Advanced SOI SRAMs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Raine, M. Gaillardin, T. Lagutere, O. Duhamel, and P. Paillet
Laser Visualization of the Development of Long Line-Type Mutli-Cell Upsets in Back-Biased SOI SRAMs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . H. Itsuji, D. Kobayashi, O. Kawasaki, D. Matsuura, T. Narita, M. Kato, S. Ishii, K. Masukawa, and K. Hirose

SINGLE-EVENT EFFECTS: TRANSIENT CHARACTERIZATION
DAMSEL—Dynamic and Applicative Measurement of Single Events in Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Glorieux, A. Evans, D. Alexandrescu, C. Boatella-Polo, K. Sanchez, and V. Ferlet-Cavrois
Impact of Single-Event Transient Duration and Electrical Delay at Reduced Supply Voltages on SET Mitigation Techniques . . . . . J. A. Maharrey,
      J. S. Kauppila, R. C. Harrington, P. Nsengiyumva, D. R. Ball, T. D. Haeffner,  E. X. Zhang,  B. L. Bhuva,  W. T. Holman,  and L. W. Massengill
Correlation of the Spatial Variation of Single-Event Transient Sensitivity With Thermoreflectance Thermography in Al_xGa_1−xN/GaN HEMTs . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Khachatrian,
      N. J.-H. Roche,  L. B. Ruppalt,  J. G. Champlain,  S. Buchner,  A. D. Koehler,  T. J. Anderson,  K. D. Hobart,  J. H. Warner, and D. McMorrow
On-Chip Relative Single-Event Transient/Single-Event Upset Susceptibility Test Circuit for Integrated Circuits Working in Real Time . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P. Hao, S. Chen, Z. Wu, and Y. Chi
Evidence of Pulse Quenching in AND and OR Gates by Experimental Probing of Full Single-Event Transient Waveforms . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Mitrović, M. Hofbauer, K. Schneider-Hornstein, B. Goll, K.-O. Voss, and H. Zimmermann

RADIATION HARDENING BY DESIGN
p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . I. Song, M.-K. Cho, Z. E. Fleetwood, Y. Gong, S. Pavlidis, S. P. Buchner, D. McMorrow, P. Paki, M. Kaynak, and J. D. Cressler
SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . Z. E. Fleetwood, A. Ildefonso, G. N. Tzintzarov, B. Wier, U. Raghunathan, M.-K. Cho, I. Song, M. T. Wachter,
      D. Nergui, A. Khachatrian, J. H. Warner, P. McMarr, H. Hughes, E. Zhang, D. McMorrow,  P. Paki,  A. Joseph,   V. Jain,   and   J. D. Cressler
A 2.56-GHz SEU Radiation Hard LC-Tank VCO for High-Speed Communication Links in 65-nm CMOS Technology . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. Prinzie, J. Christiansen, P. Moreira, M. Steyaert, and P. Leroux
Frequency Dependence of Heavy-Ion-Induced Single-Event Responses of Flip-Flops in a 16-nm Bulk FinFET Technology . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. Zhang, H. Jiang, B. L. Bhuva, J. S. Kauppila, W. T. Holman, and L. W. Massengill
nMOS Transistor Location Adjustment for N-Hit Single-Event Transient Mitigation in 65-nm CMOS Bulk Technology . . . . . . Z. Wu and S. Chen
An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . M.-K. Cho, I. Song, S. Pavlidis, Z. E. Fleetwood, S. P. Buchner, D. McMorrow, P. Paki, and J. D. Cressler

SPACE AND TERRESTRIAL RADIATION ENVIRONMENTS
Extreme Atmospheric Radiation Environments and Single Event Effects . . . . . . . . . . . . . . . . . . . . . . . . C. Dyer, A. Hands, K. Ryden, and F. Lei
The Compact Environmental Anomaly Sensor Risk Reduction: A Pathfinder for Operational Energetic Charged Particle Sensors . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C. D. Lindstrom, J. Aarestad, J. O. Ballenthin, D. A. Barton, J. M. Coombs, J. Ignazio,
      W. R. Johnston,  S. Kratochvil,  J. Love,  D. McIntire,  S. Quigley,  P. Roddy,  R. S. Selesnick, M . Sibley,  A. Vera,  A. Wheelock, and S. Wu
LHC and HL-LHC: Present and Future Radiation Environment in the High-Luminosity Collision Points and RHA Implications . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. García Alía, M. Brugger, F. Cerutti,
      S. Danzeca,  A. Ferrari,  S. Gilardoni,  Y. Kadi,  M. Kastriotou,  A. Lechner, C. Martinella, O. Stein, Y. Thurel, A. Tsinganis, and S. Uznanski
Incorporating Radiation Effects Into AE9/AP9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T. P. O’Brien and B. P. Kwan
Changes in AE9/AP9-IRENE Version 1.5 . . . . . . . . T. P. O’Brien, W. R. Johnston, S. L. Huston, C. J. Roth, T. B. Guild, Y.-J. Su, and R. A. Quinn

DOSIMETRY
Thin Silicon Microdosimeter Utilizing 3-D MEMS Fabrication Technology: Charge Collection Study and Its Application in Mixed
      Radiation Fields . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . L. T. Tran, L. Chartier, D. A. Prokopovich, D. Bolst, M. Povoli, A. Summanwar,
      A. Kok,  A. Pogossov,  M. Petasecca,  S. Guatelli, M. I. Reinhard, M. Lerch,  M. Nancarrow,  N. Matsufuji,  M. Jackson,  and  A. B. Rosenfeld
Total-Ionizing-Dose Effects on a Graphene X-Ray Detector Laser-Scribed From Graphene Oxide . . . . . . . . . . . . . . N.-Q. Deng, W.-J. Liao, J. Hu,
      P. Wang, M.-X. Xu, H.-N. Zhang, P. Wang, C.-D. Liang, H. Tian, L. Chen, X.-P. Ouyang, Y. Yang, T.-L. Ren, E. X. Zhang, and D. M. Fleetwood

RADIATION HARDNESS ASSURANCE
Application of a Focused, Pulsed X-ray Beam for Total Ionizing Dose Testing of Bipolar Linear Integrated Circuits . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. D. LaLumondiere, E. C. Dillingham, A. C. Scofield,
      J. P. Bonsall,    P. Karuza,    D. L. Brewe,   R. D. Schrimpf,   A. L. Sternberg,   N. P. Wells,  D. M. Cardoza,   W. T. Lotshaw,  and  S. C. Moss
Exploiting Parallelism and Heterogeneity in a Radiation Effects Test Vehicle for Efficient Single-Event Characterization of Nanoscale
      Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. S. Kauppila,
      J. A. Maharrey, R. C. Harrington, T. D. Haeffner, P. Nsengiyumva, D. R. Ball, A. L. Sternberg, E. X. Zhang, B. L. Bhuva, and L. W. Massengill
Correlation of a Bipolar-Transistor-Based Neutron Displacement Damage Sensor Methodology With Proton Irradiations . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. M. Tonigan, C. N. Arutt, E. J. Parma, P. J. Griffin, D. M. Fleetwood, and R. D. Schrimpf
Analysis of TPA Pulsed-Laser-Induced Single-Event Latchup Sensitive-Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . P. Wang, A. L. Sternberg, J. A. Kozub, E. X. Zhang, N. A. Dodds, S. L. Jordan, D. M. Fleetwood, R. A. Reed, and R. D. Schrimpf

PART II OF TWO PARTS

REGULAR PAPERS
ACCELERATOR TECHNOLOGY
Fully Digital and White Rabbit-Synchronized Low-Level RF System for LIPAc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C. de la Morena,
      M. Weber,   D. Regidor,   P. Méndez,   I. Kirpitchev,   J. Mollá,   A. Ibarra,   M. Méndez,   B. Rat,   J. G. Ramírez,  R. Rodríguez,  and  J. Díaz

RADIATION EFFECTS
Heavy-Ion Soft Errors in Back-Biased Thin-BOX SOI SRAMs: Hundredfold Sensitivity Due to Line-Type Multicell Upsets. . . . . . . . . D. Kobayashi,
      K. Hirose,    T. Ito,   Y. Kakehashi,   O. Kawasaki,   T. Makino,   T. Ohshima,   D. Matsuura,   T. Narita,   M. Kato,   S. Ishii,  and  K. Masukawa
Irradiation Testing of Piezoelectric (Aluminum Nitride, Zinc Oxide, and Bismuth Titanate) and Magnetostrictive Sensors (Remendur
     and Galfenol). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B. Reinhardt, J. Daw, and B. R. Tittmann
A Technique for Characterizing Ionization and Displacement Defects in NPN Transistors Induced by 1-MeV Electron Irradiation. . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . X. Li, J. Yang, and C. Liu
Microbeam Heavy-Ion Single-Event Effect on Xilinx 28-nm System on Chip. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . W. Yang, X. Du, C. He, S. Shi, L. Cai, N. Hui, G. Guo, and C. Huang
Ionizing Radiation Effects on the Noise of 65 nm CMOS Transistors for Pixel Sensor Readout at Extreme Total Dose Levels. . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V. Re, L. Gaioni, M. Manghisoni, L. Ratti, E. Riceputi, and G. Traversi
D–T Neutron and ⁶⁰Co-Gamma Irradiation Effects on HPSI 4H-SiC Photoconductors. . . . . . . . . . . . . . . . . . . . . . P. V. Raja and N. V. L. N. Murty
A Radiation-Hardened and ESD-Optimized Wireline Driver With Wide Terminal Common-Mode Voltage Range. . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . X. Xiang, X. Gao, F. Liu, M. Li, S. Huang, X. Chen, X. Zhou, S. Hu, Z. Lin, A. Bermak, and F. Tang
Electrical Transport Degradation of Chemically Doped Electronic-Type-Separated Single-Wall Carbon Nanotubes From Radiation-Induced
     Defects. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I. Puchades, J. E. Rossi, N. D. Cox, A. R. Bucossi, K. J. Soule, C. D. Cress, and B. J. Landi
Proton Irradiation Effects on AlGaN/GaN HEMTs With Different Isolation Methods. . . . . . . . . . . . . . . . D.-S. Kim, J.-H. Lee, S. Yeo, and J.-H. Lee
TID Effects on a Data Acquisition System With Design Diversity Redundancy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C. J. González, R. G. Vaz, M. B. Oliveira, V. W. Leorato, O. L. Gonçalez, and T. R. Balen

RADIATION INSTRUMENTATION
Development of a Novel Single-Channel, 24 cm², SiPM-Based, Cryogenic Photodetector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . M. D’Incecco, C. Galbiati, G. K. Giovanetti, G. Korga, X. Li, A. Mandarano, A. Razeto, D. Sablone, and C. Savarese
Performance of Pad Front-End Board for Small-Strip Thin Gap Chamber With Cosmic Ray Muons. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . F. Li, S. Liu, K. Hu, X. Wang, H. Lu, X. Wang, H. Yang, T. Geng, P. Miao, and G. Jin
Study of the Performance of an Optically Readout Triple-GEM. . . . . . . . . M . Marafini, V. Patera, D. Pinci, A. Sarti, A. Sciubba, and N. M. Torchia
A High-Performance CLYC(Ce)-PVT Composite for Neutron and Gamma Detection. . . . . . . . . . . . . . S. Lam, J. Fiala, M. Hackett, and S. Motakef
Intrinsic Resolution of Compton Electrons in CeBr₃ Scintillator Using Compact CCT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V. Ranga, S. Rawat, S. Sharma, M. Prasad, S. Panwar, Kalyani, M. Dhibar, and A. K. Gourishetty
A Practical Truncation Correction Method for Digital Breast Tomosynthesis. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. Wu, Z. Chen, J. Ma, G. Qin, B. Li, H. Qi, L. Zhou, and Y. Xu
A Study of the Fast Neutron Response of a Single-Crystal Diamond Detector at High Temperatures. . . . . . . . . . . . . . . . . A. Kumar and A. Topkar
Dynamic Compression of the Signal in a Charge Sensitive Amplifier: Experimental Results. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Manghisoni, D. Comotti, L. Gaioni, L. Ratti, and V. Re
High-Resolution Gamma-Ray Spectroscopy With a SiPM-Based Detection Module for 1” and 2” LaBr₃:Ce Readout. . . . . . . . . . . . . . . . . . . . . . . .
      . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . G. Cozzi, P. Busca,
      M. Carminati, C. Fiorini, G. L. Montagnani, F. Acerbi, A. Gola, G. Paternoster, C. Piemonte, V. Regazzoni, N. Blasi, F. Camera, and B. Million
Fixed-Latency Gigabit Serial Links in a Xilinx FPGA for the Upgrade of the Muon Spectrometer at the ATLAS Experiment. . . . . . . . . . . . . . . . . . .
     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. Wang, X. Hu, R. Pinkham, S. Hou, T. Schwarz, J. Zhu, J. W. Chapman, and B. Zhou