
T-NS Home \| Editorial Board \| T-NS in IEEE Xplore \| Early Access \| Manuscript Submission
FEATURED STORIES - JANUARY 2017
"Inclusion of Radiation Environment Variability in Total Dose Hardness Assurance Methodology" by M.A. Xapsos, C. Stauffer, A. Phan, S.S. McClure, R.L. Ladbury, J. A. Pellish, M.J. Campola, and K.A. LaBel Variability of the space radiation environment is investigated with regard to parts categorization for total dose hardness assurance methods. It is shown that it can have a significant impact. A modified approach is developed that uses current environment models more consistently and replaces the radiation design margin concept with one of failure probability during a mission. more...

"Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments" by Vincent Goiffon, Sébastien Rolando, Franck Corbière, Serena Rizzolo, Aziouz Chabane, Sylvain Girard, Jérémy Baer, Magali Estribeau, Pierre Magnan, Philippe Paillet, Marco Van Uffelen, Laura Mont Casellas, Robin Scott, Marc Gaillardin, Claude Marcandella, Olivier Marcelot, and Timothé Allanche The Total Ionizing Dose (TID) hardness of digital color Camera-on-a-Chip (CoC) building blocks is explored in the Multi-MGy range using 60Co gamma-ray irradiations. The performances of the following CoC subcomponents are studied: radiation hardened (RH) pixel and photodiode designs, RH readout chain, Color Filter Arrays (CFA) and column RH Analog-to-Digital Converters (ADC). Several radiation hardness improvements are reported (on the readout chain and on dark current). CFAs and ADCs degradations appear to be very weak at the maximum TID of 6 MGy(SiO2), 600 Mrad. In the end, this study demonstrates the feasibility of a MGy rad-hard CMOS color digital camera-on-a-chip, illustrated by a color image captured after 6 MGy(SiO2) with no obvious degradation. An original dark current reduction mechanism in irradiated CMOS Image Sensors is also reported and discussed. more...

"Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si" by En Xia Zhang, Daniel M. Fleetwood, Jordan A. Hachtel, Chundong Liang, Robert A. Reed, Michael L. Alles, Ronald D. Schrimpf, Dimitri Linten, Jerome Mitard, Matthew F. Chisholm, and Sokrates T. Pantelides We have characterized the total ionizing dose response of strained Ge pMOS FinFETs built on bulk Si using a fin replacement process. Devices irradiated to 1.0 Mrad (SiO2) show minimal transconductance degradation (less than 5%), very small Vt h shifts (less than 40 mV in magnitude) and very little ON/OFF current ratio degradation (less than 5%), and only modest variation in radiation response with transistor geometry (typically less than normal part-to-part variation). Both before and after irradiation, the performance of these strained Ge pMOS FinFETs is far superior to that of past generations of planar Ge pMOS devices. These improved properties result from significant improvements in processing technology, as well as the enhanced gate control provided by the strained Ge FinFET technology. more...

"Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cellsy" by Marta Bagatin, Simone Gerardin, Alessandro Paccagnella, Angelo Visconti, Ari Virtanen, Heikki Kettunen, Alessandra Costantino, Véronique Ferlet-Cavrois, and Ali Zadeh Floating gate cells in advanced NAND Flash memories, with single-level and multi-level cell architecture, were exposed to low-energy proton beams. The first experimental evidence of single event upsets by proton direct ionization in floating gate cells is reported. The dependence of the error rate versus proton energy is analyzed in a wide energy range. Proton direct ionization events are studied and energy loss in the overlayers is discussed. The threshold LET for floating gate errors in multi-level and single-level cell devices is modeled and technology scaling trends are analyzed, also discussing the impact of the particle track size more...



A PUBLICATION OF THE IEEE NUCLEAR AND PLASMA SCIENCES SOCIETY
JANUARY 2017 \| VOLUME 64 \| NUMBER 1 \| IETNAE \| (SSN 0018-9499)
PART I OF TWO PARTS
NUCLEAR AND SPACE RADIATION EFFECTS CONFERENCE (NSREC) Portland, OR, USA, July 11-15, 2016
EDITORIAL Editorial Conference Comments by the General Chair . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. A. Reed Special NSREC 2016 Issue of the IEEE TRANSACTIONS ON NUCLEAR SCIENCE Comments by the Editors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. M. Fleetwood, D. Brown, S. Girard, S. Gerardin, H. Quinn, D. Kobayashi, I. S. Esqueda, and W. Robinson LIST OF REVIEWERS NSREC 2016 Special Issue of the IEEE TRANSACTIONS ON NUCLEAR SCIENCE List of Reviewers AWARDS 2016 IEEE Nuclear and Space Radiation Effects Conference Awards Comments by the Chairman . . . . . . . . . . . . . . . . . . . . . . . . . . . . V. Pouget Outstanding Conference Paper Award: 2016 IEEE Nuclear and Space Radiation Effects Conference IN MEMORIAM In Memoriam Xiaojie Chen In Memoriam Orlie L. Curtis, Jr. PHOTONIC DEVICES AND INTEGRATED CIRCUITS In-Depth Analysis on Radiation Induced Multi-Level Dark Current Random Telegraph Signal in Silicon Solid State Image Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C. Durnez, V. Goiffon, C. Virmontois, J.-M. Belloir, P. Magnan, and L. Rubaldo Dark Current Spectroscopy in Neutron, Proton and Ion Irradiated CMOS Image Sensors: From Point Defects to Clusters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J.-M. Belloir, V. Goiffon, C. Virmontois, P. Paillet, M. Raine, R. Molina, C. Durnez, O. Gilard, and P. Magnan Radiation Effects in Pinned Photodiode CMOS Image Sensors: Variation of Epitaxial Layer Thickness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C. Virmontois, C. Durnez, M. Estribeau, P. Cervantes, B. Avon, V. Goiffon, P. Magnan, A. Materne, and A. Bardoux Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V. Goiffon, S. Rolando, F. Corbière, S. Rizzolo, A. Chabane, S. Girard, J. Baer, M. Estribeau, P. Magnan, P. Paillet, M. Van Uffelen, L. Mont Casellas, R. Scott, M. Gaillardin, C. Marcandella, O. Marcelot, and T. Allanche Radiation Hardened Architecture of a Single-Ended Raman-Based Distributed Temperature Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. Di Francesca, S. Girard, I. Planes, A. Cebollada, G. Li Vecchi, A. Alessi, I. Reghioua, C. Cangialosi, A. Ladaci, S. Rizzolo, V. Lecoeuche, A. Boukenter, A. Champavère, and Y. Ouerdane Evaluation of Distributed OFDR-Based Sensing Performance in Mixed Neutron/Gamma Radiation Environments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. Rizzolo, A. Boukenter, E. Marin, T. Robin, M. Cannas, A. Morana, J. Périsse, J-R Macé, Y. Ouerdane, B. Nacir, P. Paillet, C. Marcandella, M. Gaillardin, and S. Girard Radiation-Hardened Fiber Bragg Grating Based Sensors for Harsh Environments . . . . . . . . . . . . . . A. Morana, S. Girard, E. Marin, J. Périsse, . . . . . J. S. Genot, J. Kuhnhenn, J. Grelin, L. Hutter, G. Mélin, L. Lablonde, T. Robin, B. Cadier, J.-R. Macé, A. Boukenter, and Y. Ouerdane More Accurate Quantum Efficiency Damage Factor for Proton-Irradiated, III-V-Based Unipolar Barrier Infrared Detectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C. P. Morath, E. A. Garduno, V. M. Cowan, and G. Jenkins SINGLE-EVENT EFFECTS: TRANSIENT CHARACTERIZATION Detailed SET Measurement and Characterization of a 65 nm Bulk Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Glorieux, A. Evans, V. Ferlet-Cavrois, C. Boatella-Polo, D. Alexandrescu, S. Clerc, G. Gasiot, and P. Roche Single-Event Transient Response of Comparator Pre-Amplifiers in a Complementary SiGe Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Ildefonso, N. E. Lourenco, Z. E. Fleetwood, M. T. Wachter, G. N. Tzintzarov, A. S. Cardoso, N. J.-H. Roche, A. Khachatrian, D. McMorrow, S. P. Buchner, J. H. Warner, P. Paki, M. Kaynak, B. Tillack, and J. D. Cressler Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al_0.3Ga_0.7N/GaN HEMTs . . . . . . . . . . . . . . . . . . . . . . . . . . A. Khachatrian, N. J.-H. Roche, S. P. Buchner, A. D. Koehler, T. J. Anderson, K. D. Hobart, D. McMorrow, S. D. LaLumondiere, N. P. Wells, J. Bonsall, E. C. Dillingham, P. Karuza, D. L. Brewe, W. T. Lotshaw, S. C. Moss, V. Ferlet-Cavrois, and M. Muschitiello Analysis of Single-Event Effects in a Radiation-Hardened Low-Jitter PLL Under Heavy Ion and Pulsed Laser Irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Z. Chen, M. Lin, D. Ding, Y. Zheng, Z. Sang, and S. Zou Single Event Transient and TID Study in 28 nm UTBB FDSOI Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. Liu, A. Evans, L. Chen, Y. Li, M. Glorieux, R. Wong, S.-J.Wen, J. Cunha, L. Summerer, and V. Ferlet-Cavrois Characterization of Single-Event Transient Pulse Broadening Effect in 65 nm Bulk Inverter Chains Using Heavy Ion Microbeam . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Y. Chi, R. Song, S. Shi, B. Liu, L. Cai, C. Hu, and G. Guo Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. Zeinolabedinzadeh, H. Ying, Z. E. Fleetwood, N. J.-H.Roche, A. Khachatrian, D. McMorrow, S. P. Buchner, J. H. Warner, P. Paki-Amouzou, and J. D. Cressler BASIC MECHANISMS OF RADIATION EFFECTS Simulation of Single Particle Displacement Damage in Silicon – Part I: Global Approach and Primary Interaction Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Raine, A. Jay, N. Richard, V. Goiffon, S. Girard, M. Gaillardin, and P. Paillet Simulation of Single Particle Displacement Damage in Silicon–Part II: Generation and Long-Time Relaxation of Damage Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Jay, M. Raine, N. Richard, N. Mousseau, V. Goiffon, A. Hémeryck, and P. Magnan Displacement Damage in Bipolar Junction Transistors: Beyond Messenger-Spratt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. J. Barnaby, R. D. Schrimpf, K. F. Galloway, X. Li, J. Yang, and C. Liu Theory of Quantum Transport in Graphene Devices With Radiation Induced Coulomb Scatterers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. W. LaGasse, C. D. Cress, H. L. Hughes, and J. U. Lee Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics . . . . . . . . . . . . . . . . . . . . . S. Ren, M. A. Bhuiyan, J. Zhang, X. Lou, M. Si, X. Gong, R. Jiang, K. Ni, X. Wan, E. X. Zhang, R. G. Gordon, R. A. Reed, D. M. Fleetwood, P. Ye, and T. P. Ma Total Ionizing Dose Effects on HfO₂-Passivated Black Phosphorus Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C. Liang, Y. Su, E. X. Zhang, K. Ni, M. L. Alles, R. D. Schrimpf, D. M. Fleetwood, and S. J. Koester Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain and Channel . . . . . . . . . . . . . S. Ren, M. A. Bhuiyan, H. Wu, R. Jiang, K. Ni, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. Ye, and T. P. Ma 1/f Noise in As-Processed and Proton-Irradiated AlGaN/GaN HEMTs Due to Carrier Number Fluctuations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P. Wang, R. Jiang, J. Chen, E. X. Zhang, M. W. McCurdy, R. D. Schrimpf, and D. M. Fleetwood Comparison of Gain Degradation and Deep Level Transient Spectroscopy in pnp Si Bipolar Junction Transistors Irradiated With Different Ion Species . . . . . . . . . . . . B. A. Aguirre, E. Bielejec, R. M. Fleming, G. Vizkelethy, B. Vaandrager, J. Campbell, W. J. Martin, and D. B. King Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied With Electrically Detected Magnetic Resonance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. J. Waskiewicz, M. A. Anders, P. M. Lenahan, and A. J. Lelis RADIATION EFFECTS IN DEVICES AND INTEGRATED CIRCUITS Combined Effects of Total Ionizing Dose and Temperature on a K-Band Quadrature LC-Tank VCO in a 32 nm CMOS SOI Technology . . . . . . . . . . . . . . . . . . . . . . . . . T. D. Loveless, S. Jagannathan, E. X. Zhang, D. M. Fleetwood, J. S. Kauppila, T. D. Haeffner, and L. W. Massengill Low-Energy Electron Irradiation of NAND Flash Memories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. J. Gadlage, A. H. Roach, J. M. Labello, M. R. Halstead, M. J. Kay, A. R. Duncan, J. D. Ingalls, D. P. Bossev, and J. P. Rogers Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. Jiang, E. X. Zhang, M. W. McCurdy, J. Chen, X. Shen, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, J. S. Speck, and S. T. Pantelides Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E. X. Zhang, D. M. Fleetwood, J. A. Hachtel, C. Liang, R. A. Reed, M. L. Alles, R. D. Schrimpf, D. Linten, J. Mitard, M. F. Chisholm, and S. T. Pantelides Total-Ionizing-Dose Effects on Piezoelectric Micromachined Ultrasonic Transducers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . W. Liao, E. X. Zhang, M. L. Alles, C. X. Zhang, H. Gong, K. Ni, A. L. Sternberg, H. Xie, D. M. Fleetwood, R. A. Reed, and R. D. Schrimpf Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum-Well MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . K. Ni, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, M. L. Alles, J. Lin, and J. A. del Alamo Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. Prinzie, J. Christiansen, P. Moreira, M. Steyaert, and P. Leroux Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . X. Wan, O. K. Baker, M. W. McCurdy, E. X. Zhang, M. Zafrani, S. P. Wainwright, J. Xu, H. L. Bo, R. A. Reed, D. M. Fleetwood, and T. P. Ma Degradation Characteristics of Normally-Off p-AlGaN Gate AlGaN/GaN HEMTs With 5 MeV Proton Irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. M. Keum, H.-k. Sung, and H. Kim Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. Gong, W. Liao, E. X. Zhang, A. L. Sternberg, M. W. McCurdy, J. L. Davidson, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, P. D. Shuvra, J.-T. Lin, S. McNamara, K. M. Walsh, B. W. Alphenaar, and M. L. Alles Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors . . . . . . . . . . . . W. Chen, R. Fang, H. J. Barnaby, M. B. Balaban, Y. Gonzalez-Velo, J. L. Taggart, A. Mahmud, K. Holbert, A. H. Edwards, and M. N. Kozicki Total Ionizing Dose Effects on a High-Voltage (>30V) Complementary SiGe on SOI Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. P. Omprakash, Z. E. Fleetwood, U. S. Raghunathan, A. Ildefonso, A. S. Cardoso, N. E. Lourenco, J. Babcock, R. Mukhopadhyay, E. X. Zhang, P. J. McMarr, D. M. Fleetwood, and J. D. Cressler Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. P. King, X. Wu, M. Eller, S. Samavedam, M. R. Shaneyfelt, A. I. Silva, B. L. Draper, W. C. Rice, T. L. Meisenheimer, J. A. Felix, E. X. Zhang, T. D. Haeffner, D. R. Ball, K. J. Shetler, M. L. Alles, J. S. Kauppila, and L. W. Massengill RADIATION HARDNESS ASSURANCE CubeSats and Crowd-Sourced Monitoring for Single Event Effects Hardness Assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B. D. Sierawski, K. M. Warren, A. L. Sternberg, R. A. Austin, J. M. Trippe, M. W. McCurdy, R. A. Reed, R. A. Weller, M. L. Alles, R. D. Schrimpf, L. W. Massengill, D. M. Fleetwood, A. Monteiro, G. W. Buxton, III, J. C. Brandenburg, W. B. Fisher, and R. Davis Evaluating Constraints on Heavy-Ion SEE Susceptibility Imposed by Proton SEE Testing and Other Mixed Environments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. L. Ladbury and J.-M. Lauenstein Proton on Metal Fission Environments in an IC Package: An RHA Evaluation Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T. L. Turflinger, D. A. Clymer, L. W. Mason, S. Stone, J. S. George, R. Koga, E. Beach, and K. Huntington Response Variability in Commercial MOSFET SEE Qualification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. S. George, D. A. Clymer, T. L. Turflinger, L. W. Mason, S. Stone, R. Koga, E. Beach, K. Huntington, J.-M. Lauenstein, J. Titus, and M. Sivertz Inclusion of Radiation Environment Variability in Total Dose Hardness Assurance Methodology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. A. Xapsos, C. Stauffer, A. Phan, S. S. McClure, R. L. Ladbury, J. A. Pellish, M. J. Campola, and K. A. LaBel Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. Chen, E. Wilcox, R. L. Ladbury, H. Kim, A. Phan, C. Seidleck, and K. A. LaBel Robust Duplication With Comparison Methods in Microcontrollers . . . . . . . . . . . . . . . H. Quinn, Z. Baker, T. Fairbanks, J. L. Tripp, and G. Duran The Development of a High Sensitivity Neutron Displacement Damage Sensor . . . . . . . . . . . . . . . . A. M. Tonigan, E. J. Parma, and W. J. Martin RADIATION HARDENING BY DESIGN Charge-Steering Latch Design in 16 nm FinFET Technology for Improved Soft Error Hardness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B. Narasimham, K. Chandrasekharan, J. K. Wang, K. Ni, B. L. Bhuva, and R. D. Schrimpf The Use of Inverse-Mode SiGe HBTs as Active Gain Stages in Low-Noise Amplifiers for the Mitigation of Single-Event Transients. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I. Song, M.-K. Cho, N. E. Lourenco, Z. E. Fleetwood, S. Jung, N. J.-H. Roche, A. Khachatrian, S. P. Buchner, D. McMorrow, P. Paki, and J. D. Cressler Evaluation of SEU Performance of 28-nm FDSOI Flip-Flop Designs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H.-B. Wang, J. S. Kauppila, K. Lilja, M. Bounasser, L. Chen, M. Newton, Y.-Q. Li, R. Liu, B. L. Bhuva, S.-J. Wen, R. Wong, R. Fung, S. Baeg, and L. W. Massengill A Hybrid Fault-Tolerant LEON3 Soft Core Processor Implemented in Low-End SRAM FPGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Lindoso, L. Entrena, M. García-Valderas, and L. Parra Ionizing Dose-Tolerant Enhancement-Mode Cascode for High-Voltage Power Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. F. Witulski, A. L. Sternberg, J. D. Rowe, R. D. Schrimpf, J. Zydel, and J. Schaf SINGLE-EVENT EFFECTS: MECHANISMS AND MODELING Proton Dominance of Sub-LET Threshold GCR SEE Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. G. Alía, M. Brugger, V. Ferlet-Cavrois, S. Brandenburg, J. Calcutt, F. Cerutti, E. Daly, A. Ferrari, M. Muschitiello, G. Santin, S. Uznanski, M.-J. Van Goethem, and A. Zadeh Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Z. E. Fleetwood, N. E. Lourenco, A. Ildefonso, J. H. Warner, M. T. Wachter, J. M. Hales, G. N. Tzintzarov, N. J.-H. Roche, A. Khachatrian, S. P. Buchner, D. McMorrow, P. Paki, and J. D. Cressler The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . N. E. Lourenco, Z. E. Fleetwood, A. Ildefonso, M. T. Wachter, N. J.-H. Roche, A. Khachatrian, D. McMorrow, S. P. Buchner, J. H. Warner, H. Itsuji, D. Kobayashi, K. Hirose, P. Paki, A. Raman, and J. D. Cressler Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence. . . . . . . . . . . . A. Javanainen, K. F. Galloway, C. Nicklaw, A. L. Bosser, V. Ferlet-Cavrois, J.-M. Lauenstein, F. Pintacuda, R. A. Reed, R. D. Schrimpf, R. A. Weller, and A. Virtanen Upsets in Erased Floating Gate Cells With High-Energy Protons. . . . . . . . . . . . . . . . . . . . . . S. Gerardin, M. Bagatin, A. Paccagnella, A. Visconti, M. Bonanomi, M. Calabrese, L. Chiavarone, V. Ferlet-Cavrois, J. R. Schwank, M. R. Shaneyfelt, N. Dodds, M. Trinczek, and E. Blackmore The Power Law Shape of Heavy Ions Experimental Cross Section. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . F. Wrobel, A. D. Touboul, V. Pouget, L. Dilillo, E. Lorfèvre, and F. Saignè Single-Event Measurement and Analysis of Antimony-Based p-Channel Quantum-Well MOSFETs With High-κ Dielectric. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Barth, A. Kumar, J. H. Warner, B. R. Bennett, C. D. Cress, J. B. Boos, N. J.-H. Roche, M. Raine, M. Gaillardin, P. Paillet, D. McMorrow, K. Saraswat, and S. Datta Analysis of Bulk FinFET Structural Effects on Single-Event Cross Sections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P. Nsengiyumva, L. W. Massengill, M. L. Alles, B. L. Bhuva, D. R. Ball, J. S. Kauppila, T. D. Haeffner, W. T. Holman, and R. A. Reed SINGLE-EVENT EFFECTS: DEVICES AND INTEGRATED CIRCUITS On-Orbit Upset Rate Prediction at Advanced Technology Nodes: A 28 nm FD-SOI Case Study. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V. Malherbe, G. Gasiot, D. Soussan, J.-L. Autran, and P. Roche Effects of Threshold Voltage Variations on Single-Event Upset Response of Sequential Circuits at Advanced Technology Nodes. . . . . . . . . . . . . . . . . . . . . . . . . H. Zhang, H. Jiang, T. R. Assis, N. N. Mahatme, B. Narasimham, L. W. Massengill, B. L. Bhuva, S.-J. Wen, and R. Wong Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Bagatin, S. Gerardin, A. Paccagnella, A. Visconti, A. Virtanen, H. Kettunen, A. Costantino, V. Ferlet-Cavrois, and A. Zadeh Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits. . . . . . . . . . . . . R. M. Chen, Z. J. Diggins, N. N. Mahatme, L. Wang, E. X. Zhang, Y. P. Chen, Y. N. Liu, B. Narasimham, A. F. Witulski, B. L. Bhuva, and D. M. Fleetwood Single-Event Performance of Sense-Amplifier Based Flip-Flop Design in a 16-nm Bulk FinFET CMOS Process. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. Jiang, H. Zhang, T. R. Assis, B. Narasimham, B. L. Bhuva, W. T. Holman, and L. W. Massengill Radiation Experiments on a 28 nm Single-Chip Many-Core Processor and SEU Error-Rate Prediction. . . . . . . . . . . . . . . . . . . . . . . . . V. Vargas, P. Ramos, V. Ray, C. Jalier, R. Stevens, B. Dupont De Dinechin, M. Baylac, F. Villa, S. Rey, N.-E. Zergainoh, J.-F. Méhaut, and R. Velazco Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. Zhang, H. Jiang, T. R. Assis, D. R. Ball, B. Narasimham, A. Anvar, L. W. Massengill, and B. L. Bhuva A Hybrid Approach to FPGA Configuration Scrubbing . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Stoddard, A. Gruwell, P. Zabriskie, and M. J. Wirthlin Heavy-Ion Micro Beam and Simulation Study of a Flash-Based FPGA Microcontroller Implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Evans, C. Urbina Ortega, K. Marinis, E. Costenaro, H. Laroussi, K.-V. Obbe, G. Magistrati, and V. Ferlet-Cavrois Persistent Laser-Induced Leakage in a 20 nm Charge-Pump Phase-Locked Loop (PLL) . . . . . . . . . . Y. P. Chen, T. D. Loveless, A. L. Sternberg, E. X. Zhang, J. S. Kauppila, B. L. Bhuva, W. T. Holman, M. L. Alles, R. A. Reed, D. McMorrow, R. D. Schrimpf, and L. W. Massengill Benefits of Complementary SEU Mitigation for the LEON3 Soft Processor on SRAM-Based FPGAs . . . . . . . . . . . . A. M. Keller and M. J. Wirthlin Single Event Effects in Si and SiC Power MOSFETs Due to Terrestrial Neutrons . . . . . . . . . . . . A. Akturk, R. Wilkins, J. McGarrity, and B. Gersey Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. Zeinolabedinzadeh, A. C. Ulusoy, F. Inanlou, H. Ying, Y. Gong, Z. E. Fleetwood, N. J.-H. Roche, A. Khachatrian,D. McMorrow, S. P. Buchner, J. H. Warner, P. Paki-Amouzou, and J. D. Cressler DOSIMETRY Demonstration of a Passive Wireless Radiation Detector Using Fully-Depleted Silicon-on-Insulator Variable Capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Y. Li, V. R. S. K. Chaganti, M. A. Reynolds, B. J. Gerbi, and S. J. Koester The Role of Sample Geometry on Ultra-Low Alpha Particle Emissivity Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. S. Gordon, K. P. Rodbell, C. E. Murray, and B. D. McNally Total Dose Measurement Circuit Design Based on a Voltage Reference Topology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . K. J. Shetler, W. T. Holman, J. S. Kauppila, A. F. Witulski, B. L. Bhuva, E. X. Zhang, and L. W. Massengill Potential of Copper- and Cerium-Doped Optical Fiber Materials for Proton Beam Monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. Girard, B. Capoen, H. El Hamzaoui, M. Bouazaoui, G. Bouwmans, A. Morana, D. Di Francesca, A. Boukenter, O. Duhamel, P. Paillet, M. Raine, M. Gaillardin, M. Trinczek, C. Hoehr, E. Blackmore, and Y. Ouerdane Influence of the Damage Partition Function on the Uncertainty of the Silicon Displacement Damage Metric . . . . . . . P. J. Griffin and P. J. Cooper In-Situ Measurement of Total Ionising Dose Induced Changes in Threshold Voltage and Temperature Coefficients of RADFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. Hofman, A. Jaksic, R. Sharp, N. Vasovic, and J. Haze SPACE AND TERRESTRIAL RADIATION ENVIRONMENTS New Data and Modelling for Single Event Effects in the Stratospheric Radiation Environment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Hands, F. Lei, K. Ryden, C. Dyer, C. Underwood, and C. Mertens Monte Carlo Evaluation of Single Event Effects in a Deep-Submicron Bulk Technology: Comparison Between Atmospheric and Accelerator Environment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Infantino, R. G. Alía, and M. Brugger Shielding an MCP Detector for a Space-Borne Mass Spectrometer Against the Harsh Radiation Environment in Jupiter’s Magnetosphere . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. Lasi, M. Tulej, S. Meyer, M. Lüthi, A. Galli, D. Piazza, P. Wurz, D. Reggiani, H. Xiao, R. Marcinkowski, W. Hajdas, A. Cervelli, S. Karlsson, T. Knight, M. Grande, and S. Barabash Improvements of FLUKA Calculation of the Neutron Albedo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . N. Combier, A. Claret, P. Laurent, V. Maget, D. Boscher, A. Ferrari, and M. Brugger Ground Albedo Neutron Impacts to Seasonal Variations of Cosmic-Ray-Induced Neutron in Medium Geomagnetic Latitude and Antarctica: Impacts on Soft Error Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . G. Hubert Conference Author Index PART II OF TWO PARTS
REGULAR PAPERS Characterization of Single-Event Transients in Schmitt Trigger Inverter Chains Operating at Subthreshold Voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. J. Gadlage, J. R. Ahlbin, P. Gadfort, A. H. Roach, and S. Stansberry Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . L. Lv, P. Li, X. Ma, L. Liu, L. Yang, X. Zhou, J. Zhang, Y. Cao, Z. Bi, T. Jiang, Q. Zhu, and Y. Hao Total Ionizing Dose Effects on a 12-bit 40kS/s SAR ADC Designed With a Dummy Gate-Assisted n-MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T. H. Kim and H. C. Lee Recoil-Ion-Induced Single Event Upsets in Nanometer CMOS SRAM Under Low-Energy Proton Radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Z. Wu, S. Chen, J. Yu, J. Chen, P. Huang, and R. Song Proton-Induced Radiation Damage in Fast Crystal Scintillators . . . . . . . . . F. Yang, L. Zhang, R.-Y. Zhu, J. Kapustinsky, R. Nelson, and Z. Wang Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements . . . . . . . . . . . . . . . . . Y. Mu, C. Z. Zhao, Q. Lu, C. Zhao, Y. Qi, S. Lam, I. Z. Mitrovic, S. Taylor, and P. R. Chalker Single Event Upset Sensitivity of D-Flip Flop: Comparison of PDSOI With Bulk Si at 130 nm Technology Node . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . L. Zhang, J. Xu, S. Fan, L. Dai, D. Bi, J. Lu, Z. Hu, M. Zhang, and Z. Zhang Accelerated Tests of Soft Errors in Network Systems Using a Compact Accelerator-Driven Neutron Source . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. Iwashita, H. Sato, K. Arai, T. Kotanigawa, K. Kino, T. Kamiyama, F. Hiraga, K. Koda, M. Furusaka, and Y. Kiyanagi A High-Linearity, Ring-Oscillator-Based, Vernier Time-to-Digital Converter Utilizing Carry Chains in FPGAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . K. Cui, Z. Ren, X. Li, Z. Liu, and R. Zhu Scanner-Dependent Threshold Estimation of Wavelet Denoising for Small-Animal PET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. Zhao, J.-S. Lee, H. Xu, K. Xu, Z.-H. Ren, J.-C. Chen, and C.-H. Wu Nonlinear Fractional Sliding Mode Controller Based on Reduced Order FNPK Model for Output Power Control of Nuclear Research Reactors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . N. Zare Davijani, G. Jahanfarnia, and A. Esmaeili Abharian Kinetic Parameter Measurements in the MINERVE Reactor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . G. Perret, B. Geslot, A. Gruel, P. Blaise, J. Di-Salvo, G. De Izarra, C. Jammes, M. Hursin, and A. Pautz An Information-Theoretical Approach to Image Resolution Applied to Neutron Imaging Detectors Based Upon Individual Discriminator Signals . . . . . . . . . . . . . . . J.-F. Clergeau, M. Ferraton, B. Guérard, A. Khaplanov, F. Piscitelli, M. Platz, J.-M. Rigal, P. Van Esch, and T. Daullé

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A PUBLICATION OF THE IEEE NUCLEAR AND PLASMA SCIENCES SOCIETY