EDITORIAL
Editorial Conference Comments by the General Chair . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. A. Reed
Special NSREC 2016 Issue of the IEEE TRANSACTIONS ON NUCLEAR SCIENCE Comments by the Editors . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . D. M. Fleetwood, D. Brown, S. Girard, S. Gerardin, H. Quinn, D. Kobayashi, I. S. Esqueda, and W. Robinson
LIST OF REVIEWERS
NSREC 2016 Special Issue of the IEEE TRANSACTIONS ON NUCLEAR SCIENCE List of Reviewers
AWARDS
2016 IEEE Nuclear and Space Radiation Effects Conference Awards Comments by the Chairman . . . . . . . . . . . . . . . . . . . . . . . . . . . . V. Pouget
Outstanding Conference Paper Award: 2016 IEEE Nuclear and Space Radiation Effects Conference
IN MEMORIAM
In Memoriam Xiaojie Chen
In Memoriam Orlie L. Curtis, Jr.
PHOTONIC DEVICES AND INTEGRATED CIRCUITS
In-Depth Analysis on Radiation Induced Multi-Level Dark Current Random Telegraph Signal in Silicon Solid State Image
Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C. Durnez, V. Goiffon, C. Virmontois, J.-M. Belloir, P. Magnan, and L. Rubaldo
Dark Current Spectroscopy in Neutron, Proton and Ion Irradiated CMOS Image Sensors: From Point Defects to Clusters . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . J.-M. Belloir, V. Goiffon, C. Virmontois, P. Paillet, M. Raine, R. Molina, C. Durnez, O. Gilard, and P. Magnan
Radiation Effects in Pinned Photodiode CMOS Image Sensors: Variation of Epitaxial Layer Thickness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . C. Virmontois, C. Durnez, M. Estribeau, P. Cervantes, B. Avon, V. Goiffon, P. Magnan, A. Materne, and A. Bardoux
Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V. Goiffon, S. Rolando, F. Corbière, S. Rizzolo, A. Chabane, S. Girard, J. Baer,
M. Estribeau, P. Magnan, P. Paillet, M. Van Uffelen, L. Mont Casellas, R. Scott, M. Gaillardin, C. Marcandella, O. Marcelot, and T. Allanche
Radiation Hardened Architecture of a Single-Ended Raman-Based Distributed Temperature Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. Di Francesca, S. Girard, I. Planes, A. Cebollada,
G. Li Vecchi, A. Alessi, I. Reghioua, C. Cangialosi, A. Ladaci, S. Rizzolo, V. Lecoeuche, A. Boukenter, A. Champavère, and Y. Ouerdane
Evaluation of Distributed OFDR-Based Sensing Performance in Mixed Neutron/Gamma Radiation Environments . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. Rizzolo, A. Boukenter, E. Marin,
T. Robin, M. Cannas, A. Morana, J. Périsse, J-R Macé, Y. Ouerdane, B. Nacir, P. Paillet, C. Marcandella, M. Gaillardin, and S. Girard
Radiation-Hardened Fiber Bragg Grating Based Sensors for Harsh Environments . . . . . . . . . . . . . . A. Morana, S. Girard, E. Marin, J. Périsse,
. . . . . J. S. Genot, J. Kuhnhenn, J. Grelin, L. Hutter, G. Mélin, L. Lablonde, T. Robin, B. Cadier, J.-R. Macé, A. Boukenter, and Y. Ouerdane
More Accurate Quantum Efficiency Damage Factor for Proton-Irradiated, III-V-Based Unipolar Barrier Infrared Detectors . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C. P. Morath, E. A. Garduno, V. M. Cowan, and G. Jenkins
SINGLE-EVENT EFFECTS: TRANSIENT CHARACTERIZATION
Detailed SET Measurement and Characterization of a 65 nm Bulk Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . M. Glorieux, A. Evans, V. Ferlet-Cavrois, C. Boatella-Polo, D. Alexandrescu, S. Clerc, G. Gasiot, and P. Roche
Single-Event Transient Response of Comparator Pre-Amplifiers in a Complementary SiGe Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Ildefonso, N. E. Lourenco, Z. E. Fleetwood, M. T. Wachter, G. N. Tzintzarov,
A. S. Cardoso, N. J.-H. Roche, A. Khachatrian, D. McMorrow, S. P. Buchner, J. H. Warner, P. Paki, M. Kaynak, B. Tillack, and J. D. Cressler
Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al0.3Ga0.7N/GaN HEMTs . . . . . . . . . . . . . . . .
. . . . . . . . . . A. Khachatrian, N. J.-H. Roche, S. P. Buchner, A. D. Koehler, T. J. Anderson, K. D. Hobart, D. McMorrow, S. D. LaLumondiere,
N. P. Wells, J. Bonsall, E. C. Dillingham, P. Karuza, D. L. Brewe, W. T. Lotshaw, S. C. Moss, V. Ferlet-Cavrois, and M. Muschitiello
Analysis of Single-Event Effects in a Radiation-Hardened Low-Jitter PLL Under Heavy Ion and Pulsed Laser Irradiation . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Z. Chen, M. Lin, D. Ding, Y. Zheng, Z. Sang, and S. Zou
Single Event Transient and TID Study in 28 nm UTBB FDSOI Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . R. Liu, A. Evans, L. Chen, Y. Li, M. Glorieux, R. Wong, S.-J.Wen, J. Cunha, L. Summerer, and V. Ferlet-Cavrois
Characterization of Single-Event Transient Pulse Broadening Effect in 65 nm Bulk Inverter Chains Using Heavy Ion Microbeam . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Y. Chi, R. Song, S. Shi, B. Liu, L. Cai, C. Hu, and G. Guo
Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. Zeinolabedinzadeh,
H. Ying, Z. E. Fleetwood, N. J.-H.Roche, A. Khachatrian, D. McMorrow, S. P. Buchner, J. H. Warner, P. Paki-Amouzou, and J. D. Cressler
BASIC MECHANISMS OF RADIATION EFFECTS
Simulation of Single Particle Displacement Damage in Silicon – Part I: Global Approach and Primary Interaction Simulation . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Raine, A. Jay, N. Richard, V. Goiffon, S. Girard, M. Gaillardin, and P. Paillet
Simulation of Single Particle Displacement Damage in Silicon–Part II: Generation and Long-Time Relaxation of Damage Structure . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Jay, M. Raine, N. Richard, N. Mousseau, V. Goiffon, A. Hémeryck, and P. Magnan
Displacement Damage in Bipolar Junction Transistors: Beyond Messenger-Spratt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. J. Barnaby, R. D. Schrimpf, K. F. Galloway, X. Li, J. Yang, and C. Liu
Theory of Quantum Transport in Graphene Devices With Radiation Induced Coulomb Scatterers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. W. LaGasse, C. D. Cress, H. L. Hughes, and J. U. Lee
Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics . . . . . . . . . . . . . . . . . . . . . S. Ren, M. A. Bhuiyan,
J. Zhang, X. Lou, M. Si, X. Gong, R. Jiang, K. Ni, X. Wan, E. X. Zhang, R. G. Gordon, R. A. Reed, D. M. Fleetwood, P. Ye, and T. P. Ma
Total Ionizing Dose Effects on HfO2-Passivated Black Phosphorus Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C. Liang, Y. Su, E. X. Zhang, K. Ni, M. L. Alles, R. D. Schrimpf, D. M. Fleetwood, and S. J. Koester
Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain
and Channel . . . . . . . . . . . . . S. Ren, M. A. Bhuiyan, H. Wu, R. Jiang, K. Ni, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. Ye, and T. P. Ma
1/f Noise in As-Processed and Proton-Irradiated AlGaN/GaN HEMTs Due to Carrier Number Fluctuations . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P. Wang, R. Jiang, J. Chen, E. X. Zhang, M. W. McCurdy, R. D. Schrimpf, and D. M. Fleetwood
Comparison of Gain Degradation and Deep Level Transient Spectroscopy in pnp Si Bipolar Junction Transistors Irradiated With Different
Ion Species . . . . . . . . . . . . B. A. Aguirre, E. Bielejec, R. M. Fleming, G. Vizkelethy, B. Vaandrager, J. Campbell, W. J. Martin, and D. B. King
Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied With Electrically Detected Magnetic Resonance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. J. Waskiewicz, M. A. Anders, P. M. Lenahan, and A. J. Lelis
RADIATION EFFECTS IN DEVICES AND INTEGRATED CIRCUITS
Combined Effects of Total Ionizing Dose and Temperature on a K-Band Quadrature LC-Tank VCO in a 32 nm CMOS
SOI Technology . . . . . . .
. . . . . . . . . . . . . . . . . . T. D. Loveless,
S. Jagannathan, E. X. Zhang, D. M. Fleetwood, J. S. Kauppila, T. D. Haeffner, and L. W. Massengill
Low-Energy Electron Irradiation of NAND Flash Memories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . M. J. Gadlage,
A. H. Roach, J. M. Labello, M. R. Halstead, M. J. Kay, A. R. Duncan, J. D. Ingalls, D. P. Bossev, and J. P. Rogers
Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. Jiang, E. X. Zhang,
M. W. McCurdy, J. Chen,
X. Shen, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, J. S. Speck, and S. T. Pantelides
Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E. X. Zhang,
D. M. Fleetwood, J. A. Hachtel,
C. Liang, R. A. Reed, M. L. Alles, R. D. Schrimpf, D. Linten, J. Mitard, M. F. Chisholm, and S. T. Pantelides
Total-Ionizing-Dose Effects on Piezoelectric Micromachined Ultrasonic Transducers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . W. Liao, E. X. Zhang,
M. L. Alles, C. X. Zhang, H. Gong, K. Ni, A. L. Sternberg, H. Xie, D. M. Fleetwood, R. A. Reed, and R. D. Schrimpf
Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum-Well MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . K. Ni, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, M. L. Alles, J. Lin, and J. A. del Alamo
Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. Prinzie, J. Christiansen, P. Moreira, M. Steyaert, and P. Leroux
Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
X. Wan, O. K. Baker, M. W. McCurdy,
E. X. Zhang, M. Zafrani, S. P. Wainwright, J. Xu, H. L. Bo, R. A. Reed, D. M. Fleetwood, and T. P. Ma
Degradation Characteristics of Normally-Off p-AlGaN Gate AlGaN/GaN HEMTs With 5 MeV Proton
Irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. M. Keum, H.-k. Sung, and H. Kim
Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. Gong, W. Liao, E. X. Zhang, A. L. Sternberg, M. W. McCurdy,
J. L. Davidson,
R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, P. D. Shuvra, J.-T. Lin, S. McNamara, K. M. Walsh, B. W. Alphenaar, and M. L. Alles
Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and
Selectors . . . . . . . . . . . . W. Chen,
R. Fang, H. J. Barnaby, M. B. Balaban, Y. Gonzalez-Velo, J. L. Taggart, A. Mahmud, K. Holbert, A. H. Edwards, and M. N. Kozicki
Total Ionizing Dose Effects on a High-Voltage (>30V) Complementary SiGe on SOI Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. P. Omprakash, Z. E. Fleetwood, U. S. Raghunathan,
A. Ildefonso, A. S. Cardoso,
N. E. Lourenco, J. Babcock, R. Mukhopadhyay, E. X. Zhang, P. J. McMarr, D. M. Fleetwood, and J. D. Cressler
Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and
SRAM Performance . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. P. King,
X. Wu, M. Eller, S. Samavedam, M. R. Shaneyfelt, A. I. Silva, B. L. Draper, W. C. Rice,
T. L. Meisenheimer,
J. A. Felix, E. X. Zhang, T. D. Haeffner, D. R. Ball, K. J. Shetler, M. L. Alles, J. S. Kauppila, and L. W. Massengill
RADIATION HARDNESS ASSURANCE
CubeSats and Crowd-Sourced Monitoring for Single Event Effects Hardness Assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . B. D. Sierawski, K. M. Warren,
A. L. Sternberg, R. A. Austin, J. M. Trippe, M. W. McCurdy, R. A. Reed, R. A. Weller,
M. L. Alles, R. D. Schrimpf,
L. W. Massengill, D. M. Fleetwood, A. Monteiro, G. W. Buxton, III, J. C. Brandenburg, W. B. Fisher, and R. Davis
Evaluating Constraints on Heavy-Ion SEE Susceptibility Imposed by Proton SEE Testing and Other Mixed
Environments . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. L. Ladbury and J.-M. Lauenstein
Proton on Metal Fission Environments in an IC Package: An RHA Evaluation Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . T. L. Turflinger, D. A. Clymer, L. W. Mason, S. Stone, J. S. George, R. Koga, E. Beach, and K. Huntington
Response Variability in Commercial MOSFET SEE Qualification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. S. George,
D. A. Clymer, T. L. Turflinger, L. W. Mason, S. Stone, R. Koga, E. Beach, K. Huntington, J.-M. Lauenstein, J. Titus, and M. Sivertz
Inclusion of Radiation Environment Variability in Total Dose Hardness Assurance Methodology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . M. A. Xapsos, C. Stauffer, A. Phan, S. S. McClure, R. L. Ladbury, J. A. Pellish, M. J. Campola, and K. A. LaBel
Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. Chen, E. Wilcox, R. L. Ladbury, H. Kim, A. Phan, C. Seidleck, and K. A. LaBel
Robust Duplication With Comparison Methods in Microcontrollers . . . . . . . . . . . . . . . H. Quinn, Z. Baker, T. Fairbanks, J. L. Tripp, and G. Duran
The Development of a High Sensitivity Neutron Displacement Damage Sensor . . . . . . . . . . . . . . . . A. M. Tonigan, E. J. Parma, and W. J. Martin
RADIATION HARDENING BY DESIGN
Charge-Steering Latch Design in 16 nm FinFET Technology for Improved Soft Error Hardness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B. Narasimham, K. Chandrasekharan, J. K. Wang, K. Ni, B. L. Bhuva, and R. D. Schrimpf
The Use of Inverse-Mode SiGe HBTs as Active Gain Stages in Low-Noise Amplifiers for the Mitigation of
Single-Event Transients. . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I. Song,
M.-K. Cho, N. E. Lourenco,
Z. E. Fleetwood, S. Jung, N. J.-H. Roche, A. Khachatrian, S. P. Buchner, D. McMorrow, P. Paki, and J. D. Cressler
Evaluation of SEU Performance of 28-nm FDSOI Flip-Flop Designs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H.-B. Wang, J. S. Kauppila,
K. Lilja, M. Bounasser,
L. Chen, M. Newton, Y.-Q. Li, R. Liu, B. L. Bhuva, S.-J. Wen, R. Wong, R. Fung, S. Baeg, and L. W. Massengill
A Hybrid Fault-Tolerant LEON3 Soft Core Processor Implemented in Low-End SRAM FPGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Lindoso, L. Entrena, M. García-Valderas, and L. Parra
Ionizing Dose-Tolerant Enhancement-Mode Cascode for High-Voltage Power Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. F. Witulski, A. L. Sternberg, J. D. Rowe, R. D. Schrimpf, J. Zydel, and J. Schaf
SINGLE-EVENT EFFECTS: MECHANISMS AND MODELING
Proton Dominance of Sub-LET Threshold GCR SEE Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. G. Alía, M. Brugger, V. Ferlet-Cavrois,
S. Brandenburg, J. Calcutt, F. Cerutti, E. Daly, A. Ferrari, M. Muschitiello, G. Santin, S. Uznanski, M.-J. Van Goethem, and A. Zadeh
Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in
SiGe HBTs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Z. E. Fleetwood, N. E. Lourenco, A. Ildefonso, J. H. Warner,
M. T. Wachter, J. M. Hales,
G. N. Tzintzarov, N. J.-H. Roche, A. Khachatrian, S. P. Buchner, D. McMorrow, P. Paki, and J. D. Cressler
The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . N. E. Lourenco, Z. E. Fleetwood, A. Ildefonso, M. T. Wachter, N. J.-H. Roche,
A. Khachatrian, D. McMorrow, S. P. Buchner, J. H. Warner, H. Itsuji, D. Kobayashi, K. Hirose, P. Paki, A. Raman, and J. D. Cressler
Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence. . . . . . . . . . . . A. Javanainen, K. F. Galloway,
C. Nicklaw, A. L. Bosser,
V. Ferlet-Cavrois, J.-M. Lauenstein, F. Pintacuda, R. A. Reed, R. D. Schrimpf, R. A. Weller, and A. Virtanen
Upsets in Erased Floating Gate Cells With High-Energy Protons. . . . . . . . . . . . . . . . . . . . . . S. Gerardin, M. Bagatin, A. Paccagnella, A. Visconti,
M. Bonanomi, M. Calabrese,
L. Chiavarone, V. Ferlet-Cavrois, J. R. Schwank, M. R. Shaneyfelt, N. Dodds, M. Trinczek, and E. Blackmore
The Power Law Shape of Heavy Ions Experimental Cross Section. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . F. Wrobel, A. D. Touboul, V. Pouget, L. Dilillo, E. Lorfèvre, and F. Saignè
Single-Event Measurement and Analysis of Antimony-Based p-Channel Quantum-Well MOSFETs With High-κ
Dielectric. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Barth, A. Kumar, J. H. Warner,
B. R. Bennett, C. D. Cress, J. B. Boos, N. J.-H. Roche, M. Raine, M. Gaillardin, P. Paillet, D. McMorrow, K. Saraswat, and S. Datta
Analysis of Bulk FinFET Structural Effects on Single-Event Cross Sections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . P. Nsengiyumva, L. W. Massengill,
M. L. Alles, B. L. Bhuva, D. R. Ball, J. S. Kauppila, T. D. Haeffner, W. T. Holman, and R. A. Reed
SINGLE-EVENT EFFECTS: DEVICES AND INTEGRATED CIRCUITS
On-Orbit Upset Rate Prediction at Advanced Technology Nodes: A 28 nm FD-SOI Case Study. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V. Malherbe, G. Gasiot, D. Soussan, J.-L. Autran, and P. Roche
Effects of Threshold Voltage Variations on Single-Event Upset Response of Sequential Circuits at Advanced
Technology Nodes. . . . . . . . . . . .
. . . . . . . . . . . . . H. Zhang,
H. Jiang, T. R. Assis, N. N. Mahatme, B. Narasimham, L. W. Massengill, B. L. Bhuva, S.-J. Wen, and R. Wong
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . M. Bagatin,
S. Gerardin, A. Paccagnella, A. Visconti, A. Virtanen, H. Kettunen, A. Costantino, V. Ferlet-Cavrois, and A. Zadeh
Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits. . . . . . . . . . . . . R. M. Chen,
Z. J. Diggins, N. N. Mahatme,
L. Wang, E. X. Zhang, Y. P. Chen, Y. N. Liu, B. Narasimham, A. F. Witulski, B. L. Bhuva, and D. M. Fleetwood
Single-Event Performance of Sense-Amplifier Based Flip-Flop Design in a 16-nm Bulk FinFET CMOS Process. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. Jiang, H. Zhang, T. R. Assis, B. Narasimham, B. L. Bhuva, W. T. Holman, and L. W. Massengill
Radiation Experiments on a 28 nm Single-Chip Many-Core Processor and SEU Error-Rate Prediction. . . . . . . . . . . . . . . . . . . . . . . . . V. Vargas,
P. Ramos, V. Ray, C. Jalier,
R. Stevens, B. Dupont De Dinechin, M. Baylac, F. Villa, S. Rey, N.-E. Zergainoh, J.-F. Méhaut, and R. Velazco
Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET
Technology . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . H. Zhang, H. Jiang, T. R. Assis, D. R. Ball, B. Narasimham, A. Anvar, L. W. Massengill, and B. L. Bhuva
A Hybrid Approach to FPGA Configuration Scrubbing . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Stoddard, A. Gruwell, P. Zabriskie, and M. J. Wirthlin
Heavy-Ion Micro Beam and Simulation Study of a Flash-Based FPGA Microcontroller Implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . A. Evans,
C. Urbina Ortega, K. Marinis, E. Costenaro, H. Laroussi, K.-V. Obbe, G. Magistrati, and V. Ferlet-Cavrois
Persistent Laser-Induced Leakage in a 20 nm Charge-Pump Phase-Locked Loop (PLL) . . . . . . . . . . Y. P. Chen, T. D. Loveless, A. L. Sternberg,
E. X. Zhang, J. S. Kauppila, B. L. Bhuva, W. T. Holman, M. L. Alles, R. A. Reed, D. McMorrow, R. D. Schrimpf, and L. W. Massengill
Benefits of Complementary SEU Mitigation for the LEON3 Soft Processor on SRAM-Based FPGAs . . . . . . . . . . . . A. M. Keller and M. J. Wirthlin
Single Event Effects in Si and SiC Power MOSFETs Due to Terrestrial Neutrons . . . . . . . . . . . . A. Akturk, R. Wilkins, J. McGarrity, and B. Gersey
Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT
Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. Zeinolabedinzadeh, A. C. Ulusoy, F. Inanlou, H. Ying,
Y. Gong, Z. E. Fleetwood,
N. J.-H. Roche, A. Khachatrian,D. McMorrow, S. P. Buchner, J. H. Warner, P. Paki-Amouzou, and J. D. Cressler
DOSIMETRY
Demonstration of a Passive Wireless Radiation Detector Using Fully-Depleted Silicon-on-Insulator Variable
Capacitors . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Y. Li, V. R. S. K. Chaganti, M. A. Reynolds, B. J. Gerbi, and S. J. Koester
The Role of Sample Geometry on Ultra-Low Alpha Particle Emissivity Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. S. Gordon, K. P. Rodbell, C. E. Murray, and B. D. McNally
Total Dose Measurement Circuit Design Based on a Voltage Reference Topology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . K. J. Shetler, W. T. Holman, J. S. Kauppila, A. F. Witulski, B. L. Bhuva, E. X. Zhang, and L. W. Massengill
Potential of Copper- and Cerium-Doped Optical Fiber Materials for Proton Beam Monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. Girard, B. Capoen, H. El Hamzaoui, M. Bouazaoui, G. Bouwmans, A. Morana,
D. Di Francesca,
A. Boukenter, O. Duhamel, P. Paillet, M. Raine, M. Gaillardin, M. Trinczek, C. Hoehr, E. Blackmore, and Y. Ouerdane
Influence of the Damage Partition Function on the Uncertainty of the Silicon Displacement Damage Metric . . . . . . . P. J. Griffin and P. J. Cooper
In-Situ Measurement of Total Ionising Dose Induced Changes in Threshold Voltage and Temperature Coefficients of
RADFETs . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. Hofman, A. Jaksic, R. Sharp, N. Vasovic, and J. Haze
SPACE AND TERRESTRIAL RADIATION ENVIRONMENTS
New Data and Modelling for Single Event Effects in the Stratospheric Radiation Environment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Hands, F. Lei, K. Ryden, C. Dyer, C. Underwood, and C. Mertens
Monte Carlo Evaluation of Single Event Effects in a Deep-Submicron Bulk Technology: Comparison Between
Atmospheric and
Accelerator Environment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Infantino, R. G. Alía, and M. Brugger
Shielding an MCP Detector for a Space-Borne Mass Spectrometer Against the Harsh Radiation Environment in
Jupiter’s Magnetosphere . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. Lasi, M. Tulej, S. Meyer, M. Lüthi, A. Galli,
D. Piazza, P. Wurz,
D. Reggiani, H. Xiao, R. Marcinkowski, W. Hajdas, A. Cervelli, S. Karlsson, T. Knight, M. Grande, and S. Barabash
Improvements of FLUKA Calculation of the Neutron Albedo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . N. Combier, A. Claret, P. Laurent, V. Maget, D. Boscher, A. Ferrari, and M. Brugger
Ground Albedo Neutron Impacts to Seasonal Variations of Cosmic-Ray-Induced Neutron in Medium Geomagnetic
Latitude and Antarctica:
Impacts on Soft Error Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . G. Hubert
Conference Author Index
PART II OF TWO PARTS
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