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This is the inaugural issue of a newsletter reporting recent articles published in IEEE Transactions on Nuclear Science (T-NS). We hope that you will find it a useful tool to help you identify new content of interest in the journal. The top section may highlight articles that the editorial team has identified as likely to be of broad interest to the community. These will be made open access (no subscription required to read the full article), typically for a limited time. Following those articles is the Table of Contents for the current issue of the journal. The highlighted links will take you directly to the article in IEEE Xplore. The August issue of T-NS described here contains a special part consisting of papers which review and/or extend the state-of-the art in modeling and simulation of radiation effects on microelectronics. The featured articles are all drawn from this special issue, and because of their expected broad appeal, have been made open access on a permanent basis. Feel free to forward this email to colleagues who you think may find it beneficial; they can subscribe using the link at the bottom. If you would prefer not to receive these emails, there is also an unsubscribe link at the bottom.
"Physical Processes and Applications of the Monte Carlo Radiative Energy Deposition (MRED) Code" by Robert A. Reed, Robert A. Weller, Marcus H. Mendenhall, Daniel M. Fleetwood, Kevin M. Warren, Brian D. Sierawski, Michael P. King, Ronald D. Schrimpf and Elizabeth C. Auden MRED is a Python-language scriptable computer application that simulates radiation transport. It is the computational engine for the on-line tool CRÈME-MC. MRED is based on c++ code from Geant4 with additional Fortran components to simulate electron transport and nuclear reactions with high precision. We provide a detailed description of the structure of MRED and the implementation of the simulation of physical processes used to simulate radiation effects in electronic devices and circuits. more...

"1/f Noise and Defects in Microelectronic Materials and Devices" by D. M. Fleetwood This paper reviews and compares predictions of the Dutta-Horn model of low-frequency excess (1/ f) noise with experimental results for thin metal films, MOS transistors, and GaN/AlGaN high-electron mobility transistors (HEMTs). For metal films, mobility fluctuations associated with carrier-defect scattering lead to 1/f noise. more...

"Validation Techniques for Fault Emulation of SRAM-based FPGAs" by Heather Quinn and Michael Wirthlin A variety of fault emulation systems have been created to study the effect of single-event effects (SEEs) in static random access memory (SRAM) based field-programmable gate arrays (FPGAs). These systems are useful for augmenting radiation-hardness assurance (RHA) methodologies for verifying the effectiveness for mitigation techniques; understanding error signatures and failure modes in FPGAs; and failure rate estimation. more...

"Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies" by I. Sanchez Esqueda, H. J. Barnaby, and M. P. King This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. more...



A PUBLICATION OF THE IEEE NUCLEAR AND PLASMA SCIENCES SOCIETY
AUGUST 2015 \| VOLUME 62 \| NUMBER 4 \| IETNAE \| (SSN 0018-9499)
PART I OF TWO PARTS
MODELING AND SIMULATION OF RADIATION EFFECTS
EDITORIAL 2015 Special Issue of the IEEE TRANSACTIONS ON NUCLEAR SCIENCE Modeling and Simulation of Radiation Effects Editor Comments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. Fleetwood, D. Brown, S. Girard, P. Gouker, S. Gerardin, H. Quinn, and H. Barnaby List of Reviewers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Physical Processes and Applications of the Monte Carlo Radiative Energy Deposition (MRED) Code . . . . . . . . . . . . . . . R. A. Reed, R. A. Weller, . . . . . . . . . . . . . . . . . . . . . . . . . M. H. Mendenhall, D. M. Fleetwood, K. M. Warren, B. D. Sierawski, M. P. King, R. D. Schrimpf, and E. C. Auden 1/ƒ Noise and Defects in Microelectronic Materials and Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. M. Fleetwood Validation Techniques for Fault Emulation of SRAM-based FPGAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. Quinn and M. Wirthlin Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies . . . . . . . . I. Sanchez Esqueda, H. J. Barnaby, and M. P. King ECORCE: A TCAD Tool for Total Ionizing Dose and Single Event Effect Modeling . . . . . . . . . . . . . . . . . . . A. Michez, S. Dhombres, and J. Boch Modeling Single Event Transients in Advanced Devices and ICs . . . . . . . . . . . . . . . . . . L. Artola, M. Gaillardin, G. Hubert, M. Raine, and P. Paillet Modeling of Single Event Transients With Dual Double-Exponential Current Sources: Implications for Logic Cell Characterization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. A. Black, W. H. Robinson, I. Z. Wilcox, D. B. Limbrick, and J. D. Black Simulation of Laser-Based Two-Photon Absorption Induced Charge Carrier Generation in Silicon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. M. Hales, A. Khachatrian, N. J.-H. Roche, J. H. Warner, S. Buchner, and D. McMorrow Limitations of LET in Predicting the Radiation Response of Advanced Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E. D. Funkhouser, R. A. Weller, R. A. Reed, R. D. Schrimpf, M. H. Mendenhall, and M. Asai Estimating SEE Error Rates for Complex SoCsWith ASERT . . . . . . . . . . M. Cabanas-Holmen, E. H. Cannon, T. Amort, J. Ballast, and R. Brees Circuit Simulation Based Validation of Flip-Flop Robustness to Multiple Node Charge Collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. Shambhulingaiah, C. Lieb, and L. T. Clark Geometry-Aware Single-Event Enabled Compact Models for Sub-50 nm Partially Depleted Silicon-on-Insulator Technologies . . . . . . . . . . . . . . . . . . . . . J. S. Kauppila, L. W. Massengill, D. R. Ball, M. L. Alles, R. D. Schrimpf, T. D. Loveless, J. A. Maharrey, R. C. Quinn, and J. D. Rowe Single Event Latch-Up Hardening Using TCAD Simulations in 130 nm and 65 nm Embedded SRAM in Flash-Based FPGAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . N. Rezzak and J.-J. Wang Automatic Single Event Effects Sensitivity Analysis of a 13-Bit Successive Approximation ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . F. Márquez, F. Muñoz, F. R. Palomo, L. Sanz, E. López-Morillo, M. Aguirre, and A. Jiménez A Methodology to Emulate Single Event Upsets in Flip-Flops Using FPGAs through Partial Reconfiguration and Instrumentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . F. Serrano, J. A. Clemente, and H. Mecha SPICE Simulations of Single Event Transients in Bipolar Analog Integrated Circuits Using Public Information and Free Open Source Tools . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . F. J. Franco, C. Palomar, J. G. Izquierdo, and J. A. Agapito Numerical Simulation of 14.1 MeV Neutron Irradiation Effects on Electrical Characteristics of PIPS Detector for Plasma X-Ray Tomography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P. V. Raja, N. V. L. N. Murty, C. V. S Rao, and M. Abhangi Study of Neutron Soft Error Rate (SER) Sensitivity: Investigation of Upset Mechanisms by Comparative Simulation of FinFET and Planar MOSFET SRAMs . . . . . . . . . . . . J. Noh, V. Correas, S. Lee, J. Jeon, I. Nofal, J. Cerba, H. Belhaddad, D. Alexandrescu, Y. Lee, and S. Kwon Total Dose Radiation Damage: A Simulation Framework . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E. Patrick, N. Rowsey, and M. E. Law Improved Model for Increased Surface Recombination Current in Irradiated Bipolar Junction Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. J. Barnaby, B. Vermeire, and M. J. Campola Numerical Modeling of MOS Dosimeters Under Switched Bias Irradiations . . . . . . . . . . . . . L. Sambuco Salomone, A. Faigón, and E. G. Redin System Health Awareness in Total-Ionizing Dose Environments . . . . . . . . . . . . . . . . . . . . . . Z. J. Diggins, N. Mahadevan, E. B. Pitt, D. Herbison, . . . . . . . . . . . . . . . . . . . . . . . . . . G. Karsai, B. D. Sierawski, E. J. Barth, R. A. Reed, R. D. Schrimpf, R. A. Weller, M. L. Alles, and A. F. Witulski 1/ƒ Noise Model for NPN Bipolar Junction Transistors Based on Radiation Effect . . . . . . . . . . . . . . . . . . . Q. Zhao, Y. Zhuang, J. Bao, and W. Hu Novel Bonner Sphere Spectrometer Response Functions Using MCNP6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. W. Decker, S. R. McHale, M. P. Shannon, J. A. Clinton, and J. W. McClory Effect of Multiple Scattering on the Compton Recoil Current Generated in an EMP, Revisited . . . . . . . . . . . . . . . . W. A. Farmer and A. Friedman PART II OF TWO PARTS
THIRD INTERNATIONAL CONFERENCE ON ADVANCEMENTS IN NUCLEAR INSTRUMENTATION, MEASUREMENT METHODS AND THEIR APPLICATIONS (ANIMMA 2013), MARSEILLES, FRANCE, JUNE 23-27, 2013
Improvement of Real-Time Tritium Monitor for Low-Level Measurement at HANARO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. S. Kim
3^rd CONFERENCE ON PET/MR AND SPECT/MR, HELONA RESORT, KOS ISLAND, GREECE, MAY 19-21, 2014 Collimator Design for a Brain SPECT/MRI Insert . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. Salvado, K. Erlandsson, A. Bousse, M. Occhipinti, P. Busca, C. Fiorini, and B. F. Hutton Effects of Regularisation Priors and Anatomical Partial Volume Correction on Dynamic PET Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . L. L. Caldeira, N. da Silva, J. J. Scheins, M. E. Gaens, and N. J. Shah
19^th REAL TIME CONFERENCE (RT2014), NARA, JAPAN, MAY 26-30, 2014 A z-Vertex Trigger for Belle II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. Skambraks, F. Abudinén, Y. Chen, M. Feindt, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. Frühwirth, M. Heck, C. Kiesling, A. Knoll, S. Neuhaus, S. Paul, and J. Schieck Readout Electronics for the Central Drift Chamber of the Belle-II Detector . . . . . . . . . . . . . . . . . . . . T. Uchida, T. Taniguchi, M. Ikeno, Y. Iwasaki, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Saito, S. Shimazaki, M. M. Tanaka, N. Taniguchi, and S. Uno A 32 Terabit/s Data Acquisition from Mostly COTS Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . R. Schwemmer and N. Neufeld 100 Gbps PCI-Express Readout for the LHCb Upgrade . . . . . . . . . . . . . P. Durante, N. Neufeld, R. Schwemmer, U. Marconi, G. Balbi, and I. Lax NSTX-U Advances in Real-Time C++11 on Linux . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . K. G. Erickson Improvement of Nonlinearity Correction for BESIII ETOF Upgrade . . . . . . . . . . . W. Sun, P. Cao, X. Ji, H. Fan, H. Dai, J. Zhang, S. Liu, and Q. An NUCLEAR AND SPACE RADIATION EFFECTS CONFERENCE (NSREC) , PARIS, FRANCE, JULY 14-18, 2014 Analysis of Hamming EDAC SRAMs Using Simplified Birthday Statistics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. J. Tausch and H. Puchner 21^st SYMPOSIUM ON ROOM-TEMPERATURE SEMICONDUCTOR DETECTORS (RTSD) SEATTLE, WA, USA, NOVEMBER 8-15, 2014 CZT AND CdTe GROWTH AND CHARACTERIZATION Improving and Characterizing (Cd,Zn)Te Crystals for Detecting Gamma-Ray Radiation . . . . . . . . . . . . . L. Davydov, P. Fochuk, A. Zakharchenko, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V. Kutny, A. Rybka, N. Kovalenko, S. Sulima, I. Terzin, A. Gerasimenko, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Kosmyna, V. Sklyarchuk, O. Kopach, O. Panchuk, A. Pudov, A. E. Bolotnikov, and R. B. James OTHER DETECTORS METALS Quantification of the Conditioning Phase in Cooled Pixelated TlBr Detectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . W. Koehler, Z. He, S. O'Neal, H. Yang, H. Kim, L. Cirignano, and K. Shah WIDE BAND-GAP SEMICONDUCTORS Solid State Organic X-Ray Detectors Based on Rubrene Single Crystals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . L. Basiricò, A. Ciavatti, M. Sibilia, A. Fraleoni-Morgera, S. Trabattoni, A. Sassella, and B. Fraboni REGULAR PAPERS ANALOG AND DIGITAL CIRCUITS Characteristics of an Energy-Resolving System Using Dynamic Time Over Threshold Method . . . . . . . Y. Tian, H. Takahashi, and K. Shimazoe COMPUTING, SIMULATION, ALGORITHMS, AND SOFTWARE Investigation of Geant4 Simulation of Electron Backscattering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T. Basaglia, M. C. Han, G. Hoff, C. H. Kim, S. H. Kim, M. G. Pia, and P. Saracco Effect of Non-Alignment/Alignment of Attenuation Map Without/With Emission Motion Correction in Cardiac SPECT/CT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. Dey, W. P. Segars, P. H. Pretorius, and M. A. King HIGH ENERGY PHYSICS DETECTORS Characterization of Silicon Photomultipliers for nEXO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I. Ostrovskiy, F. Retiere, D. Auty, J. Dalmasson, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T. Didberidze, R. DeVoe, G. Gratta, L. Huth, L. James, L. Lupin-Jimenez, N. Ohmart, and A. Piepke HOMELAND SECURITY APPLICATIONS A Novel Markov Random Field-Based Clustering Algorithm to Detect High-Z ObjectsWith Cosmic Rays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C. Thomay, J. J. Velthuis, P. Baesso, D. Cussans, C. Steer, J. Burns, S. Quillin, and M. Stapleton NUCLEAR POWER INSTRUMENTATION AND CONTROL Estimation of Minimum DNBR Using Cascaded Fuzzy Neural Networks . . . . . . . . . . . . . . . . . . . . . . . . . . . . D. Y. Kim, K. H. Yoo, and M. G. Na NUCLEAR POWER PLANTS Adaptive Fading Memory H_∞ Filter Design for Compensation of Delayed Components in Self Powered Flux Detectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P. K. Tamboli, S. P. Duttagupta, and K. Roy PHOTODETECTORS Methodology for the Determination of the Photon Detection Efficiency of Large-Area Multi-Pixel Photon Counters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T. Beattie, G. J. Lolos, Z. Papandreou, A. Y. Semenov, and L. A. Teigrob RADIATION EFFECTS Radiation Induced Response of Ba_0.5Sr_0.5TiO₃ Based Tunable Capacitors Under Gamma Irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. S. Barala, J. Singh, S. Ranwa, and M. Kumar 3D Thermal and Mechanical Analysis of a Single Event Burnout . . . . . . . . . . . . . . . . . . . . . . . . G. Peretti, G. Demarco, E. Romero, and C. Tais Supply Voltage Dependency on the Single Event Upset Susceptibility of Temporal Dual-Feedback Flip-Flops in a 90 nm Bulk CMOS Process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Hasanbegovic and S. Aunet Supply Voltage Dependence of Heavy Ion Induced SEEs on 65 nm CMOS Bulk SRAMs . . . . . . . . . . . . . . . . . . . . . Q. Wu, Y. Li, L. Chen, A. He, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . G. Guo, S. H. Baeg, H. Wang, R. Liu, L. Li, S.-J. Wen, R. Wong, S. Allman, and R. Fung Application of p-Channel Power VDMOSFET as a High Radiation Doses Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. M. Pejovic RADIATION IMAGING A Filtered Back-Projection Algorithm for 4π Compton Camera Data . . . . . . . . . . . . . . . . . . . . . A. Haefner, D. Gunter, R. Barnowski, and K. Vetter X-RAY DETECTORS AND MATERIALS X-Ray Transmission Characteristic Measurements of Polycapillary Optics Installed in an Analytical Electron Microscope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Takano, K. Maehata, N. Iyomoto, T. Hara, K. Mitsuda, N. Yamasaki, and K. Tanaka

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"Physical Processes and Applications of the Monte Carlo Radiative Energy Deposition (MRED) Code"

"1/f Noise and Defects in Microelectronic Materials and Devices"

"Validation Techniques for Fault Emulation of SRAM-based FPGAs"

"Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies"

A PUBLICATION OF THE IEEE NUCLEAR AND PLASMA SCIENCES SOCIETY